The diffusion of germanium in silicon
The diffusion of germanium in single-crystal silicon has been measured using the radioactive tracer 71Ge and a thin sectioning technique. The activation energy of 4.7 eV determined from the data is analyzed by considering the expected contribution due to the wrong-sized impurity ions. It is conclude...
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| Veröffentlicht in: | Journal of applied physics 1973-03, Vol.44 (3), p.1409-1410 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The diffusion of germanium in single-crystal silicon has been measured using the radioactive tracer 71Ge and a thin sectioning technique. The activation energy of 4.7 eV determined from the data is analyzed by considering the expected contribution due to the wrong-sized impurity ions. It is concluded that the high activation energy observed is expected from analogy to silicon self-diffusion. |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.1662371 |