Annealing kinetics of sputtered gold-tungsten and gold-molybdenum films
The annealing kinetics of sputtered Au–W and Au–Mo films have been investigated as a function of temperature up to 500°C. The electrical resistivity of the gold layer after deposition was measured to be 1.25 times the bulk resistivity. The excess resistivity was attributed to structural defects such...
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| Veröffentlicht in: | J. Appl. Phys., v. 44, no. 12, pp. 5259-5265 v. 44, no. 12, pp. 5259-5265, 1973-12, Vol.44 (12), p.5259-5265 |
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| container_title | J. Appl. Phys., v. 44, no. 12, pp. 5259-5265 |
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| creator | Christou, Aristotelis Day, Howard M. |
| description | The annealing kinetics of sputtered Au–W and Au–Mo films have been investigated as a function of temperature up to 500°C. The electrical resistivity of the gold layer after deposition was measured to be 1.25 times the bulk resistivity. The excess resistivity was attributed to structural defects such as vacancies, interstitials, twins, dislocations, and impurities which were quenched in during deposition. Particle size changes in Au–W and Au–Mo occur in two stages, with an activation energy for gold of 0.4 eV below 200°C and 0.7 eV above 200°C. The activation energy for the refractory layer particle growth was 1.8 eV up to 500°C. The kinetics of dislocation (Nd) annealing at 500°C was determined to follow an equation of the form Q(Nd) = − A(Nd)m, with m = 3. Annealing the films up to 500°C resulted in a decrease of internal stress in gold from 2.5 × 109 dyn/cm2. The observed results are discussed in terms of microstructural changes and the dependence of internal stress on film thickness. |
| doi_str_mv | 10.1063/1.1662140 |
| format | Article |
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C. 20375</creatorcontrib><description>The annealing kinetics of sputtered Au–W and Au–Mo films have been investigated as a function of temperature up to 500°C. The electrical resistivity of the gold layer after deposition was measured to be 1.25 times the bulk resistivity. The excess resistivity was attributed to structural defects such as vacancies, interstitials, twins, dislocations, and impurities which were quenched in during deposition. Particle size changes in Au–W and Au–Mo occur in two stages, with an activation energy for gold of 0.4 eV below 200°C and 0.7 eV above 200°C. The activation energy for the refractory layer particle growth was 1.8 eV up to 500°C. The kinetics of dislocation (Nd) annealing at 500°C was determined to follow an equation of the form Q(Nd) = − A(Nd)m, with m = 3. Annealing the films up to 500°C resulted in a decrease of internal stress in gold from 2.5 × 109 dyn/cm2. The observed results are discussed in terms of microstructural changes and the dependence of internal stress on film thickness.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1662140</identifier><language>eng</language><publisher>United States</publisher><subject>ACTIVATION ENERGY ; DISLOCATIONS ; ELECTRIC CONDUCTIVITY ; GOLD ALLOYS- ANNEALING ; HIGH TEMPERATURE ; IMPURITIES ; INTERSTITIALS ; KINETICS ; MICROSTRUCTURE ; N50230 -Metals, Ceramics, & Other Materials-Metals & Alloys-Properties, Structure & Phase Studies ; PARTICLE SIZE ; STRESS RELAXATION ; TUNGSTEN ALLOYS ; TWINNING ; VACANCIES MOLYBDENUM ALLOYS</subject><ispartof>J. Appl. 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Appl. Phys., v. 44, no. 12, pp. 5259-5265</title><description>The annealing kinetics of sputtered Au–W and Au–Mo films have been investigated as a function of temperature up to 500°C. The electrical resistivity of the gold layer after deposition was measured to be 1.25 times the bulk resistivity. The excess resistivity was attributed to structural defects such as vacancies, interstitials, twins, dislocations, and impurities which were quenched in during deposition. Particle size changes in Au–W and Au–Mo occur in two stages, with an activation energy for gold of 0.4 eV below 200°C and 0.7 eV above 200°C. The activation energy for the refractory layer particle growth was 1.8 eV up to 500°C. The kinetics of dislocation (Nd) annealing at 500°C was determined to follow an equation of the form Q(Nd) = − A(Nd)m, with m = 3. Annealing the films up to 500°C resulted in a decrease of internal stress in gold from 2.5 × 109 dyn/cm2. The observed results are discussed in terms of microstructural changes and the dependence of internal stress on film thickness.</description><subject>ACTIVATION ENERGY</subject><subject>DISLOCATIONS</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>GOLD ALLOYS- ANNEALING</subject><subject>HIGH TEMPERATURE</subject><subject>IMPURITIES</subject><subject>INTERSTITIALS</subject><subject>KINETICS</subject><subject>MICROSTRUCTURE</subject><subject>N50230 -Metals, Ceramics, & Other Materials-Metals & Alloys-Properties, Structure & Phase Studies</subject><subject>PARTICLE SIZE</subject><subject>STRESS RELAXATION</subject><subject>TUNGSTEN ALLOYS</subject><subject>TWINNING</subject><subject>VACANCIES MOLYBDENUM ALLOYS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1973</creationdate><recordtype>article</recordtype><recordid>eNotkMFKAzEURYMoWKsL_2Bw52Lqe5NkkixL0VYouNF1yCRv6uhMpkzSRf_eSru6cDlcuIexR4QFQs1fcIF1XaGAKzZD0KZUUsI1mwFUWGqjzC27S-kHAFFzM2PrZYzk-i7uit8uUu58Ksa2SPtDzjRRKHZjH8p8iLuUKRYuXpph7I9NoHgYirbrh3TPblrXJ3q45Jx9vb1-rjbl9mP9vlpuS19JkUupDDZCh4Ya9KpyQsvgTC25Dlw7qZ0yAasgwQCKShKBcYq3UhFgIB_4nD2dd8eUO5t8l8l_-_F0wmcruJBCwgl6PkN-GlOaqLX7qRvcdLQI9l-TRXvRxP8ABuFZhw</recordid><startdate>19731201</startdate><enddate>19731201</enddate><creator>Christou, Aristotelis</creator><creator>Day, Howard M.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19731201</creationdate><title>Annealing kinetics of sputtered gold-tungsten and gold-molybdenum films</title><author>Christou, Aristotelis ; Day, Howard M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c254t-5791b48dbeb1c72a485da96538d38a58a79d12d50901425ee09a73f57e01decd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1973</creationdate><topic>ACTIVATION ENERGY</topic><topic>DISLOCATIONS</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>GOLD ALLOYS- ANNEALING</topic><topic>HIGH TEMPERATURE</topic><topic>IMPURITIES</topic><topic>INTERSTITIALS</topic><topic>KINETICS</topic><topic>MICROSTRUCTURE</topic><topic>N50230 -Metals, Ceramics, & Other Materials-Metals & Alloys-Properties, Structure & Phase Studies</topic><topic>PARTICLE SIZE</topic><topic>STRESS RELAXATION</topic><topic>TUNGSTEN ALLOYS</topic><topic>TWINNING</topic><topic>VACANCIES MOLYBDENUM ALLOYS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Christou, Aristotelis</creatorcontrib><creatorcontrib>Day, Howard M.</creatorcontrib><creatorcontrib>Naval Research Laboratory, Washington, D. C. 20375</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys., v. 44, no. 12, pp. 5259-5265</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Christou, Aristotelis</au><au>Day, Howard M.</au><aucorp>Naval Research Laboratory, Washington, D. C. 20375</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Annealing kinetics of sputtered gold-tungsten and gold-molybdenum films</atitle><jtitle>J. Appl. Phys., v. 44, no. 12, pp. 5259-5265</jtitle><date>1973-12-01</date><risdate>1973</risdate><volume>44</volume><issue>12</issue><spage>5259</spage><epage>5265</epage><pages>5259-5265</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The annealing kinetics of sputtered Au–W and Au–Mo films have been investigated as a function of temperature up to 500°C. The electrical resistivity of the gold layer after deposition was measured to be 1.25 times the bulk resistivity. The excess resistivity was attributed to structural defects such as vacancies, interstitials, twins, dislocations, and impurities which were quenched in during deposition. Particle size changes in Au–W and Au–Mo occur in two stages, with an activation energy for gold of 0.4 eV below 200°C and 0.7 eV above 200°C. The activation energy for the refractory layer particle growth was 1.8 eV up to 500°C. The kinetics of dislocation (Nd) annealing at 500°C was determined to follow an equation of the form Q(Nd) = − A(Nd)m, with m = 3. Annealing the films up to 500°C resulted in a decrease of internal stress in gold from 2.5 × 109 dyn/cm2. The observed results are discussed in terms of microstructural changes and the dependence of internal stress on film thickness.</abstract><cop>United States</cop><doi>10.1063/1.1662140</doi><tpages>7</tpages></addata></record> |
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| ispartof | J. Appl. Phys., v. 44, no. 12, pp. 5259-5265, 1973-12, Vol.44 (12), p.5259-5265 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1662140 |
| source | AIP Digital Archive |
| subjects | ACTIVATION ENERGY DISLOCATIONS ELECTRIC CONDUCTIVITY GOLD ALLOYS- ANNEALING HIGH TEMPERATURE IMPURITIES INTERSTITIALS KINETICS MICROSTRUCTURE N50230 -Metals, Ceramics, & Other Materials-Metals & Alloys-Properties, Structure & Phase Studies PARTICLE SIZE STRESS RELAXATION TUNGSTEN ALLOYS TWINNING VACANCIES MOLYBDENUM ALLOYS |
| title | Annealing kinetics of sputtered gold-tungsten and gold-molybdenum films |
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