Electrical and optical properties of proton-bombarded gallium phosphide

The electrical and optical properties of proton-bombarded p- and n-type liquid-encapsulated Czochralski-grown GaP have been investigated as a function of 300-keV proton dose and subsequent annealing. Proton bombardment of GaP introduced lattice damage into a surface layer equivalent in thickness to...

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Veröffentlicht in:	Journal of applied physics 1973-01, Vol.44 (1), p.214-219
Hauptverfasser:	Spitzer, S. M., North, J. C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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