Measurement of Free-Carrier Lifetimes in GaP by Photoinduced Modulation of Infrared Absorption
A new technique is presented for measuring the lifetimes of both minority and majority photoexcited free carriers in GaP. The technique is useful for both n- and p- type material in any doping range and involves measurement of the modulation of the free-carrier infrared absorption induced by photoex...
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| Veröffentlicht in: | Journal of applied physics 1971-01, Vol.42 (8), p.3205-3208 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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