Effects of Light on the Charge State of InSb–MOS Devices

We have made a detailed study of the effects of photon radiation in the energy range between 0.5 and 5.0 eV on InSb metal-oxide-semiconductor (MOS) devices. Measurements of the photocurrent through the MOS structures made at several temperatures showed that even at 300°K a photovoltage is developed...

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Veröffentlicht in:	Journal of applied physics 1969-08, Vol.40 (9), p.3661-3667
Hauptverfasser:	Krag, W. E., Phelan, R. J., Dimmock, J. O.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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