Properties of chalcogenide glass-silicon heterojunctions
The properties of heterojunctions between n- and p-type crystalline silicon and certain threshold-type amorphous chalcogenide films have been investigated. Low-field and high-field I-V characteristics, switching properties, and photoelectric behavior have all been studied. Devices fabricated with si...
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| Veröffentlicht in: | Applied physics letters 1973-01, Vol.23 (4), p.186-188 |
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| Sprache: | eng |
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| container_end_page | 188 |
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| container_issue | 4 |
| container_start_page | 186 |
| container_title | Applied physics letters |
| container_volume | 23 |
| creator | Reinhard, D. K. Arntz, F. O. Adler, D. |
| description | The properties of heterojunctions between n- and p-type crystalline silicon and certain threshold-type amorphous chalcogenide films have been investigated. Low-field and high-field I-V characteristics, switching properties, and photoelectric behavior have all been studied. Devices fabricated with silicon substrates of opposite types are distinctly different; device characteristics at low voltages were found to be influenced appreciably by interface states. Short-circuit photocurrent data imply band models which explain the I-V properties in both the absence and the presence of light. |
| doi_str_mv | 10.1063/1.1654853 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1973-01, Vol.23 (4), p.186-188 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1654853 |
| source | AIP Digital Archive |
| title | Properties of chalcogenide glass-silicon heterojunctions |
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