Densities of amorphous Si films by nuclear backscattering
The backscattering of 2500-keV alpha particles is used to measure the densities of amorphous Si films. The density of amorphous Si is found to be inversely proportional to the electron spin resonance signals. The extrapolated density at zero spins is equal to 1.01 ± 0.02 times that of crystalline Si...
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| Veröffentlicht in: | Appl. Phys. Lett. 21: No. 7, 305-7(1 Oct 1972) 305-7(1 Oct 1972), 1972-01, Vol.21 (7), p.305-307 |
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| container_title | Appl. Phys. Lett. 21: No. 7, 305-7(1 Oct 1972) |
| container_volume | 21 |
| creator | Brodsky, M.H. Kaplan, D. Ziegler, J.F. |
| description | The backscattering of 2500-keV alpha particles is used to measure the densities of amorphous Si films. The density of amorphous Si is found to be inversely proportional to the electron spin resonance signals. The extrapolated density at zero spins is equal to 1.01 ± 0.02 times that of crystalline Si. The highest density achieved in a real amorphous film was 0.97 ± 0.02 times the crystalline density. |
| doi_str_mv | 10.1063/1.1654388 |
| format | Article |
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The highest density achieved in a real amorphous film was 0.97 ± 0.02 times the crystalline density.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1654388</identifier><language>eng</language><subject>ALPHA PARTICLES ; ALPHA PARTICLES/scattering from amorphous silicon films at 2.5 MeV, use for density measurement ; AMORPHOUS STATE ; BACKSCATTERING ; DENSITY ; ELECTRON SPIN RESONANCE ; MEV RANGE 01-10 ; N46200 -Instrumentation-Radiometric Instruments ; N74200 - -Physics (Solid State)-Physical Properties ; POROSITY ; SILICON ; SILICON/density of amorphous films of, extrapolation to zero voids using ESR and nuclear backscattering ; VOIDS</subject><ispartof>Appl. Phys. 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Y</creatorcontrib><title>Densities of amorphous Si films by nuclear backscattering</title><title>Appl. Phys. Lett. 21: No. 7, 305-7(1 Oct 1972)</title><description>The backscattering of 2500-keV alpha particles is used to measure the densities of amorphous Si films. The density of amorphous Si is found to be inversely proportional to the electron spin resonance signals. The extrapolated density at zero spins is equal to 1.01 ± 0.02 times that of crystalline Si. The highest density achieved in a real amorphous film was 0.97 ± 0.02 times the crystalline density.</description><subject>ALPHA PARTICLES</subject><subject>ALPHA PARTICLES/scattering from amorphous silicon films at 2.5 MeV, use for density measurement</subject><subject>AMORPHOUS STATE</subject><subject>BACKSCATTERING</subject><subject>DENSITY</subject><subject>ELECTRON SPIN RESONANCE</subject><subject>MEV RANGE 01-10</subject><subject>N46200 -Instrumentation-Radiometric Instruments</subject><subject>N74200 - -Physics (Solid State)-Physical Properties</subject><subject>POROSITY</subject><subject>SILICON</subject><subject>SILICON/density of amorphous films of, extrapolation to zero voids using ESR and nuclear backscattering</subject><subject>VOIDS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1972</creationdate><recordtype>article</recordtype><recordid>eNotkLFOwzAURS0EEqUw8AcWG0OKX55jOyMqFJAqMQCz5bzY1NAmle0O_XuK2unqSkdnOIzdgpiBUPgAM1CNRGPO2ASE1hUCmHM2EUJgpdoGLtlVzj-H29SIE9Y--SHHEn3mY-BuM6btatxl_hF5iOtN5t2eDztae5d45-g3kyvFpzh8X7OL4NbZ35x2yr4Wz5_z12r5_vI2f1xWhLUolSRZh04bxC440D0Bgep1Q4QgXK9Mqzoi50PwupYNGdlD77TyLYquDx6n7O7oHXOJNlMsnlY0DoOnYqVCqU17gO6PEKUx5-SD3aa4cWlvQdj_MBbsKQz-AZ85VXI</recordid><startdate>19720101</startdate><enddate>19720101</enddate><creator>Brodsky, M.H.</creator><creator>Kaplan, D.</creator><creator>Ziegler, J.F.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19720101</creationdate><title>Densities of amorphous Si films by nuclear backscattering</title><author>Brodsky, M.H. ; Kaplan, D. ; Ziegler, J.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-4c42fb7833bfa17dc1c16d75cc310ad6896bccaeffe7245c84d1da76e930bdfe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1972</creationdate><topic>ALPHA PARTICLES</topic><topic>ALPHA PARTICLES/scattering from amorphous silicon films at 2.5 MeV, use for density measurement</topic><topic>AMORPHOUS STATE</topic><topic>BACKSCATTERING</topic><topic>DENSITY</topic><topic>ELECTRON SPIN RESONANCE</topic><topic>MEV RANGE 01-10</topic><topic>N46200 -Instrumentation-Radiometric Instruments</topic><topic>N74200 - -Physics (Solid State)-Physical Properties</topic><topic>POROSITY</topic><topic>SILICON</topic><topic>SILICON/density of amorphous films of, extrapolation to zero voids using ESR and nuclear backscattering</topic><topic>VOIDS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Brodsky, M.H.</creatorcontrib><creatorcontrib>Kaplan, D.</creatorcontrib><creatorcontrib>Ziegler, J.F.</creatorcontrib><creatorcontrib>IBM Watson Research Center, Yorktown Heights, N. Y</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett. 21: No. 7, 305-7(1 Oct 1972)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Brodsky, M.H.</au><au>Kaplan, D.</au><au>Ziegler, J.F.</au><aucorp>IBM Watson Research Center, Yorktown Heights, N. Y</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Densities of amorphous Si films by nuclear backscattering</atitle><jtitle>Appl. Phys. Lett. 21: No. 7, 305-7(1 Oct 1972)</jtitle><date>1972-01-01</date><risdate>1972</risdate><volume>21</volume><issue>7</issue><spage>305</spage><epage>307</epage><pages>305-307</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The backscattering of 2500-keV alpha particles is used to measure the densities of amorphous Si films. The density of amorphous Si is found to be inversely proportional to the electron spin resonance signals. The extrapolated density at zero spins is equal to 1.01 ± 0.02 times that of crystalline Si. The highest density achieved in a real amorphous film was 0.97 ± 0.02 times the crystalline density.</abstract><doi>10.1063/1.1654388</doi><tpages>3</tpages></addata></record> |
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| ispartof | Appl. Phys. Lett. 21: No. 7, 305-7(1 Oct 1972), 1972-01, Vol.21 (7), p.305-307 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | ALPHA PARTICLES ALPHA PARTICLES/scattering from amorphous silicon films at 2.5 MeV, use for density measurement AMORPHOUS STATE BACKSCATTERING DENSITY ELECTRON SPIN RESONANCE MEV RANGE 01-10 N46200 -Instrumentation-Radiometric Instruments N74200 - -Physics (Solid State)-Physical Properties POROSITY SILICON SILICON/density of amorphous films of, extrapolation to zero voids using ESR and nuclear backscattering VOIDS |
| title | Densities of amorphous Si films by nuclear backscattering |
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