ORIENTATION EFFECTS IN THE RESISTIVITY OF Ta FILMS SPUTTERED IN OXYGEN

Tantalum films deposited by sputtering in an O–Ar mixture consist of the tetragonal β phase. As the flow rate of the mixture into the sputtering system increases, the preferred-growth orientation changes from (200) to (202) and the resistivity ρ increases from 265 to 1100μΩ-cm. The value of Δρ/ΔT de...

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Veröffentlicht in:	Appl. Phys. Lett. 17: 264-5(15 Sep 1970) 1970-01, Vol.17 (6), p.264-265
1. Verfasser:	Westwood, W. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	ELECTRIC CONDUCTIVITY N30130 -Metals, Ceramics, & Other Materials-Metals & Alloys-Properties Evaluations N33120 -Physics (Solid State)-Physical Properties ORIENTATION OXYGEN SPUTTERING TANTALUM TANTALUM/electric conductivity of films sputtered in oxygen, orientation effects on TEMPERATURE
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