ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON
The g value, line shape, and linewidth of an ESR signal in Si layers which have been damaged by ion implantation of Si, P, or As at room temperature are found to be identical to those of the electron states observed in amorphous Si films prepared by rf sputtering. Interference phenomena observed in...
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Veröffentlicht in: | Appl. Phys. Lett. 16: 205-8(1 Mar 1970) 1970-01, Vol.16 (5), p.205-208 |
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container_title | Appl. Phys. Lett. 16: 205-8(1 Mar 1970) |
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creator | Crowder, B. L. Title, R. S. Brodsky, M. H. Pettit, G. D. |
description | The g value, line shape, and linewidth of an ESR signal in Si layers which have been damaged by ion implantation of Si, P, or As at room temperature are found to be identical to those of the electron states observed in amorphous Si films prepared by rf sputtering. Interference phenomena observed in the optical absorption spectra allow a determination of the depth to which the Si has been damaged by the energetic heavy ions. These two techniques together provide a new tool for investigating lattice disorder in ion-implanted Si layers. |
doi_str_mv | 10.1063/1.1653163 |
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Y</creatorcontrib><title>ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON</title><title>Appl. Phys. Lett. 16: 205-8(1 Mar 1970)</title><description>The g value, line shape, and linewidth of an ESR signal in Si layers which have been damaged by ion implantation of Si, P, or As at room temperature are found to be identical to those of the electron states observed in amorphous Si films prepared by rf sputtering. Interference phenomena observed in the optical absorption spectra allow a determination of the depth to which the Si has been damaged by the energetic heavy ions. These two techniques together provide a new tool for investigating lattice disorder in ion-implanted Si layers.</description><subject>ABSORPTION</subject><subject>AMORPHOUS STATE</subject><subject>ARSENIC</subject><subject>ARSENIC IONS/effects on silicon, ESR and absorption spectral studies of</subject><subject>BOMBARDMENT</subject><subject>CRYSTALLIZATION</subject><subject>CRYSTALS</subject><subject>ELECTRON SPIN RESONANCE</subject><subject>ELECTRONS</subject><subject>IMPURITIES</subject><subject>INTERFERENCE</subject><subject>ION BEAMS</subject><subject>ION IMPLANTATION</subject><subject>N33110 -Physics (Solid State)-Radiation Effects</subject><subject>PHOSPHORUS</subject><subject>PHOSPHORUS IONS/effects on silicon, ESR and absorption spectral studies of</subject><subject>RESONANCE</subject><subject>SILICON</subject><subject>SILICON IONS/effects on silicon, ESR and absorption spectral studies of</subject><subject>SILICON/ion implantation damage in, ESR and absorption spectral studies of</subject><subject>SPECTRA</subject><subject>SPIN</subject><subject>WAVE PROPAGATION SILICON</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1970</creationdate><recordtype>article</recordtype><recordid>eNotkMFOg0AURSdGE2t14R9M3LmgzpvHMBJX2FIlQWgKXU_gzRAx2hqGjX8vTbu69yQ3Z3EZuwexABHhEywgUggRXrAZCK0DBHi-ZDMhBAZRrOCa3Xj_NaGSiDP2klZbnhQrXm7qbJnkPHmtyu3Uy4JX9W6VpRUv13zCIPvY5ElRpyteZXm2LItbdtU1397dnXPOduu0Xr4Hefl2dAWEUoxBAzEQitZ2oXJWarLWYQxSyLaxcQg2bLGxKJ3SDVEHWgMJQaqVIopJW5yzh5P34MfeeOpHR5902O8djSYEHSvEafR4GtFw8H5wnfkd-p9m-DMgzPEaA-Z8Df4D6u1PKw</recordid><startdate>19700101</startdate><enddate>19700101</enddate><creator>Crowder, B. 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L.</creatorcontrib><creatorcontrib>Title, R. S.</creatorcontrib><creatorcontrib>Brodsky, M. H.</creatorcontrib><creatorcontrib>Pettit, G. D.</creatorcontrib><creatorcontrib>IBM Watson Research Center, Yorktown Heights, N. Y</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett. 16: 205-8(1 Mar 1970)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Crowder, B. L.</au><au>Title, R. S.</au><au>Brodsky, M. H.</au><au>Pettit, G. D.</au><aucorp>IBM Watson Research Center, Yorktown Heights, N. Y</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON</atitle><jtitle>Appl. Phys. Lett. 16: 205-8(1 Mar 1970)</jtitle><date>1970-01-01</date><risdate>1970</risdate><volume>16</volume><issue>5</issue><spage>205</spage><epage>208</epage><pages>205-208</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The g value, line shape, and linewidth of an ESR signal in Si layers which have been damaged by ion implantation of Si, P, or As at room temperature are found to be identical to those of the electron states observed in amorphous Si films prepared by rf sputtering. Interference phenomena observed in the optical absorption spectra allow a determination of the depth to which the Si has been damaged by the energetic heavy ions. These two techniques together provide a new tool for investigating lattice disorder in ion-implanted Si layers.</abstract><doi>10.1063/1.1653163</doi><tpages>4</tpages></addata></record> |
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subjects | ABSORPTION AMORPHOUS STATE ARSENIC ARSENIC IONS/effects on silicon, ESR and absorption spectral studies of BOMBARDMENT CRYSTALLIZATION CRYSTALS ELECTRON SPIN RESONANCE ELECTRONS IMPURITIES INTERFERENCE ION BEAMS ION IMPLANTATION N33110 -Physics (Solid State)-Radiation Effects PHOSPHORUS PHOSPHORUS IONS/effects on silicon, ESR and absorption spectral studies of RESONANCE SILICON SILICON IONS/effects on silicon, ESR and absorption spectral studies of SILICON/ion implantation damage in, ESR and absorption spectral studies of SPECTRA SPIN WAVE PROPAGATION SILICON |
title | ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON |
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