ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON

The g value, line shape, and linewidth of an ESR signal in Si layers which have been damaged by ion implantation of Si, P, or As at room temperature are found to be identical to those of the electron states observed in amorphous Si films prepared by rf sputtering. Interference phenomena observed in...

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Veröffentlicht in:Appl. Phys. Lett. 16: 205-8(1 Mar 1970) 1970-01, Vol.16 (5), p.205-208
Hauptverfasser: Crowder, B. L., Title, R. S., Brodsky, M. H., Pettit, G. D.
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container_issue 5
container_start_page 205
container_title Appl. Phys. Lett. 16: 205-8(1 Mar 1970)
container_volume 16
creator Crowder, B. L.
Title, R. S.
Brodsky, M. H.
Pettit, G. D.
description The g value, line shape, and linewidth of an ESR signal in Si layers which have been damaged by ion implantation of Si, P, or As at room temperature are found to be identical to those of the electron states observed in amorphous Si films prepared by rf sputtering. Interference phenomena observed in the optical absorption spectra allow a determination of the depth to which the Si has been damaged by the energetic heavy ions. These two techniques together provide a new tool for investigating lattice disorder in ion-implanted Si layers.
doi_str_mv 10.1063/1.1653163
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ispartof Appl. Phys. Lett. 16: 205-8(1 Mar 1970), 1970-01, Vol.16 (5), p.205-208
issn 0003-6951
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subjects ABSORPTION
AMORPHOUS STATE
ARSENIC
ARSENIC IONS/effects on silicon, ESR and absorption spectral studies of
BOMBARDMENT
CRYSTALLIZATION
CRYSTALS
ELECTRON SPIN RESONANCE
ELECTRONS
IMPURITIES
INTERFERENCE
ION BEAMS
ION IMPLANTATION
N33110 -Physics (Solid State)-Radiation Effects
PHOSPHORUS
PHOSPHORUS IONS/effects on silicon, ESR and absorption spectral studies of
RESONANCE
SILICON
SILICON IONS/effects on silicon, ESR and absorption spectral studies of
SILICON/ion implantation damage in, ESR and absorption spectral studies of
SPECTRA
SPIN
WAVE PROPAGATION SILICON
title ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON
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