CHARACTERIZATION OF FOREIGN ATOMS AND NATIVE DEFECTS IN SINGLE CRYSTALS OF CADMIUM TELLURIDE BY HIGH-TEMPERATURE CONDUCTIVITY MEASUREMENTS

A method of determining the purity of CdTe which may also be applicable to other compound semi-conductors is presented. The electrical conductivity of undoped and lightly doped CdTe was studied from 600 to 900°C as a function of the partial pressures of its components. At high tellurium over-pressur...

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Veröffentlicht in:	Applied physics letters 1969-01, Vol.15 (8), p.260-262
1. Verfasser:	Zanio, K. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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