THE ELECTRICAL BEHAVIOR OF IMPLANTED BISMUTH IN SILICON

THE ELECTRICAL BEHAVIOR OF IMPLANTED BISMUTH IN SILICON

The electrical behavior of 20–50-keV Bi implanted layers in silicon has been evaluated using Hall effect and sheet resistivity measurements. Implants of greater than 1014/cm2 performed at room temperature show a large increase in the number of carriers/cm2 for short anneals at ≈600°C that is associa...

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Veröffentlicht in:Applied physics letters 1968-09, Vol.13 (6), p.199-201
Hauptverfasser: Marsh, O. J., Baron, R., Shifrin, G. A., Mayer, J. W.
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container_title Applied physics letters
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creator Marsh, O. J.
Baron, R.
Shifrin, G. A.
Mayer, J. W.
description The electrical behavior of 20–50-keV Bi implanted layers in silicon has been evaluated using Hall effect and sheet resistivity measurements. Implants of greater than 1014/cm2 performed at room temperature show a large increase in the number of carriers/cm2 for short anneals at ≈600°C that is associated with the reordering of the lattice. Although Rutherford scattering measurements (performed at Chalk River Nuclear Laboratories) indicate that ≈80% of the Bi atoms are substitutional, only ≈20% are effective electrically. The peak value of the carrier density distribution is ten times the corresponding maximum solid solubility.
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title THE ELECTRICAL BEHAVIOR OF IMPLANTED BISMUTH IN SILICON
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