Comment on “Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures” [Appl. Phys. Lett. 80 , 2684 (2002)]

Comment on “Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures” [Appl. Phys. Lett. 80 , 2684 (2002)]

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2004-02, Vol.84 (8), p.1425-1426
Hauptverfasser: Tang, N., Shen, B., Zheng, Z. W., Chen, D. J., Tao, C. M., Zhang, R., Shi, Y., Zheng, Y. D.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1426
container_issue 8
container_start_page 1425
container_title Applied physics letters
container_volume 84
creator Tang, N.
Shen, B.
Zheng, Z. W.
Chen, D. J.
Tao, C. M.
Zhang, R.
Shi, Y.
Zheng, Y. D.
description
doi_str_mv 10.1063/1.1650903
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1650903</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1650903</sourcerecordid><originalsourceid>FETCH-LOGICAL-c262t-5fa381e03b3f24dd06588ba611f87b9a137dba5f8bbe4b1a4e6cb2d9584b429c3</originalsourceid><addsrcrecordid>eNotkMFOAjEYhBujiYgefIMeJXGX_2-33e6REEUSghz0ZMym3W0DZmHJthzwxNGzZ30LnoOH4EmEyGlmMslk8hFyixAjSN7FGKWADPgZaSGkacQR1TlpAQCPZCbwklx5_3GIgnHeIut-PZ_bRaD1gu43P5OZ_axtZYvQzApqnTu4Y9WrIOZi__W92w4Xu-1AQyzFuDvQYzq1wTa1D82qCKvG-v3ml771lssqppPp2sd0ZEOIqQJ6T5lUCb1jAKzzfk0unK68vTlpm7w-Prz0n6LR82DY742igkkWIuE0V2iBG-5YUpYghVJGS0SnUpNp5GlptHDKGJsY1ImVhWFlJlRiEpYVvE06_7vF4aVvrMuXzWyum3WOkB-Z5ZifmPE_71te8g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Comment on “Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures” [Appl. Phys. Lett. 80 , 2684 (2002)]</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Tang, N. ; Shen, B. ; Zheng, Z. W. ; Chen, D. J. ; Tao, C. M. ; Zhang, R. ; Shi, Y. ; Zheng, Y. D.</creator><creatorcontrib>Tang, N. ; Shen, B. ; Zheng, Z. W. ; Chen, D. J. ; Tao, C. M. ; Zhang, R. ; Shi, Y. ; Zheng, Y. D.</creatorcontrib><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1650903</identifier><language>eng</language><ispartof>Applied physics letters, 2004-02, Vol.84 (8), p.1425-1426</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c262t-5fa381e03b3f24dd06588ba611f87b9a137dba5f8bbe4b1a4e6cb2d9584b429c3</citedby><cites>FETCH-LOGICAL-c262t-5fa381e03b3f24dd06588ba611f87b9a137dba5f8bbe4b1a4e6cb2d9584b429c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27907,27908</link.rule.ids></links><search><creatorcontrib>Tang, N.</creatorcontrib><creatorcontrib>Shen, B.</creatorcontrib><creatorcontrib>Zheng, Z. W.</creatorcontrib><creatorcontrib>Chen, D. J.</creatorcontrib><creatorcontrib>Tao, C. M.</creatorcontrib><creatorcontrib>Zhang, R.</creatorcontrib><creatorcontrib>Shi, Y.</creatorcontrib><creatorcontrib>Zheng, Y. D.</creatorcontrib><title>Comment on “Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures” [Appl. Phys. Lett. 80 , 2684 (2002)]</title><title>Applied physics letters</title><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNotkMFOAjEYhBujiYgefIMeJXGX_2-33e6REEUSghz0ZMym3W0DZmHJthzwxNGzZ30LnoOH4EmEyGlmMslk8hFyixAjSN7FGKWADPgZaSGkacQR1TlpAQCPZCbwklx5_3GIgnHeIut-PZ_bRaD1gu43P5OZ_axtZYvQzApqnTu4Y9WrIOZi__W92w4Xu-1AQyzFuDvQYzq1wTa1D82qCKvG-v3ml771lssqppPp2sd0ZEOIqQJ6T5lUCb1jAKzzfk0unK68vTlpm7w-Prz0n6LR82DY742igkkWIuE0V2iBG-5YUpYghVJGS0SnUpNp5GlptHDKGJsY1ImVhWFlJlRiEpYVvE06_7vF4aVvrMuXzWyum3WOkB-Z5ZifmPE_71te8g</recordid><startdate>20040223</startdate><enddate>20040223</enddate><creator>Tang, N.</creator><creator>Shen, B.</creator><creator>Zheng, Z. W.</creator><creator>Chen, D. J.</creator><creator>Tao, C. M.</creator><creator>Zhang, R.</creator><creator>Shi, Y.</creator><creator>Zheng, Y. D.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20040223</creationdate><title>Comment on “Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures” [Appl. Phys. Lett. 80 , 2684 (2002)]</title><author>Tang, N. ; Shen, B. ; Zheng, Z. W. ; Chen, D. J. ; Tao, C. M. ; Zhang, R. ; Shi, Y. ; Zheng, Y. D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c262t-5fa381e03b3f24dd06588ba611f87b9a137dba5f8bbe4b1a4e6cb2d9584b429c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tang, N.</creatorcontrib><creatorcontrib>Shen, B.</creatorcontrib><creatorcontrib>Zheng, Z. W.</creatorcontrib><creatorcontrib>Chen, D. J.</creatorcontrib><creatorcontrib>Tao, C. M.</creatorcontrib><creatorcontrib>Zhang, R.</creatorcontrib><creatorcontrib>Shi, Y.</creatorcontrib><creatorcontrib>Zheng, Y. D.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tang, N.</au><au>Shen, B.</au><au>Zheng, Z. W.</au><au>Chen, D. J.</au><au>Tao, C. M.</au><au>Zhang, R.</au><au>Shi, Y.</au><au>Zheng, Y. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comment on “Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures” [Appl. Phys. Lett. 80 , 2684 (2002)]</atitle><jtitle>Applied physics letters</jtitle><date>2004-02-23</date><risdate>2004</risdate><volume>84</volume><issue>8</issue><spage>1425</spage><epage>1426</epage><pages>1425-1426</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><doi>10.1063/1.1650903</doi><tpages>2</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2004-02, Vol.84 (8), p.1425-1426
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1650903
source AIP Journals Complete; AIP Digital Archive
title Comment on “Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures” [Appl. Phys. Lett. 80 , 2684 (2002)]
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T15%3A31%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comment%20on%20%E2%80%9CPiezoelectric%20effect%20on%20Al0.35%E2%88%92%CE%B4In%CE%B4Ga0.65N/GaN%20heterostructures%E2%80%9D%20%5BAppl.%20Phys.%20Lett.%2080%20,%202684%20(2002)%5D&rft.jtitle=Applied%20physics%20letters&rft.au=Tang,%20N.&rft.date=2004-02-23&rft.volume=84&rft.issue=8&rft.spage=1425&rft.epage=1426&rft.pages=1425-1426&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1650903&rft_dat=%3Ccrossref%3E10_1063_1_1650903%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true