A magnetic-field-effect transistor and spin transport

A magnetic-field-effect transistor and spin transport

A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresistance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a grounded magnetic shell. The process underlying the operation o...

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Veröffentlicht in:Applied physics letters 2003-12, Vol.83 (22), p.4577-4579
Hauptverfasser: Gurzhi, R. N., Kalinenko, A. N., Kopeliovich, A. I., Yanovsky, A. V., Bogachek, E. N., Landman, Uzi
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container_end_page 4579
container_issue 22
container_start_page 4577
container_title Applied physics letters
container_volume 83
creator Gurzhi, R. N.
Kalinenko, A. N.
Kopeliovich, A. I.
Yanovsky, A. V.
Bogachek, E. N.
Landman, Uzi
description A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresistance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a grounded magnetic shell. The process underlying the operation of the device is the withdrawal of one of the spin components from the channel, and its dissipation through the grounded boundaries of the magnetic shell, resulting in a spin-polarized current in the nonmagnetic channel. The device may generate an almost fully spin-polarized current, and a giant negative magnetoresistance effect is predicted.
doi_str_mv 10.1063/1.1630839
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title A magnetic-field-effect transistor and spin transport
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