Electrical transport in boron nanowires

Electrical transport in boron nanowires

Electrical transport is studied in crystalline boron nanowires, using Ni and Ti as the contact electrodes, in which Ni forms ohmic contact and Ti forms Schottky-barrier junction. Three-terminal electrical measurements demonstrate p-type semiconductor behavior with estimated carrier mobility of 10−3 ...

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Veröffentlicht in:Applied physics letters 2003-12, Vol.83 (25), p.5280-5282
Hauptverfasser: Wang, Dawei, Lu, Jia G., Otten, Carolyn Jones, Buhro, William E.
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container_title Applied physics letters
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creator Wang, Dawei
Lu, Jia G.
Otten, Carolyn Jones
Buhro, William E.
description Electrical transport is studied in crystalline boron nanowires, using Ni and Ti as the contact electrodes, in which Ni forms ohmic contact and Ti forms Schottky-barrier junction. Three-terminal electrical measurements demonstrate p-type semiconductor behavior with estimated carrier mobility of 10−3 cm2/V s. The conductivities in annealed devices are on the order of 10−2 (Ω cm)−1. At 4.2 K, the I-V shows low conductance at low bias voltage, and increases exponentially beyond a threshold electric field close to 105 V/cm. We attribute this behavior to electric-field-induced impact ionization.
doi_str_mv 10.1063/1.1630380
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title Electrical transport in boron nanowires
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