On the nitrogen vacancy in GaN

The dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV donor. Since only N-sublattice displacements can be produced at this energy, and since theory predicts that the N interstitial is a deep acceptor in n-type GaN, we argue that the 70 meV donor is most...

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Veröffentlicht in:	Applied physics letters 2003-10, Vol.83 (17), p.3525-3527
Hauptverfasser:	Look, D. C., Farlow, G. C., Drevinsky, P. J., Bliss, D. F., Sizelove, J. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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