Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory

Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory

The Pt hillock in a Pt/Ti electrode stack has been the main concern in ferroelectric random access memory due to the reliability problem. The origin of the hillock formation is the compressive stress, and the main mass transport mechanism for hillock formation is the grain boundary diffusion for thi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2003-09, Vol.83 (11), p.2160-2162
Hauptverfasser: Jung, Won Woong, Choi, Si Kyung, Kweon, Soon Yong, Yeom, Seung Jin
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 2162
container_issue 11
container_start_page 2160
container_title Applied physics letters
container_volume 83
creator Jung, Won Woong
Choi, Si Kyung
Kweon, Soon Yong
Yeom, Seung Jin
description The Pt hillock in a Pt/Ti electrode stack has been the main concern in ferroelectric random access memory due to the reliability problem. The origin of the hillock formation is the compressive stress, and the main mass transport mechanism for hillock formation is the grain boundary diffusion for thin films with a columnar structure. However, the hillock growth orientation and mechanism have not been reported. In this study, we found that an orientation relationship of Pt(100)hillock//Pt(111)thin film existed between the Pt hillock and the thin film. The Pt hillock was a single crystal having facets with polyatomic steps. From these results, we suggest that the Pt hillock growth mechanism is the layer growth of flat faces, which shapes the hillock into a tetrahedron single crystal.
doi_str_mv 10.1063/1.1610809
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1610809</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1610809</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-47e05034bafba1776628d66466c606eb2ebb20c51fc999675136ed5f0d585d813</originalsourceid><addsrcrecordid>eNotkD1PwzAURS0EEqEw8A880iHte3H8koyo4kuqRIeyEjmOTQ1JjGwj1H9PUTtdXd2jOxzGbhEWCCSWuEBCqKE5YxlCVeUCsT5nGQCInBqJl-wqxs9DlYUQGXvfDCq56We8Q4A537lh8PqLfwT_m3bcTVzxTVpuHTeD0Sn43vCY1IGwPnBrQvDHwWke1NT7kSutTYx8NKMP-2t2YdUQzc0pZ-zt8WG7es7Xr08vq_t1rotGpLysDEgQZadsp7CqiIq6JyqJNAGZrjBdV4CWaHXTNFRJFGR6aaGXtexrFDM2P_7q4GMMxrbfwY0q7FuE9l9Mi-1JjPgD_nBUgg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Jung, Won Woong ; Choi, Si Kyung ; Kweon, Soon Yong ; Yeom, Seung Jin</creator><creatorcontrib>Jung, Won Woong ; Choi, Si Kyung ; Kweon, Soon Yong ; Yeom, Seung Jin</creatorcontrib><description>The Pt hillock in a Pt/Ti electrode stack has been the main concern in ferroelectric random access memory due to the reliability problem. The origin of the hillock formation is the compressive stress, and the main mass transport mechanism for hillock formation is the grain boundary diffusion for thin films with a columnar structure. However, the hillock growth orientation and mechanism have not been reported. In this study, we found that an orientation relationship of Pt(100)hillock//Pt(111)thin film existed between the Pt hillock and the thin film. The Pt hillock was a single crystal having facets with polyatomic steps. From these results, we suggest that the Pt hillock growth mechanism is the layer growth of flat faces, which shapes the hillock into a tetrahedron single crystal.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1610809</identifier><language>eng</language><ispartof>Applied physics letters, 2003-09, Vol.83 (11), p.2160-2162</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-47e05034bafba1776628d66466c606eb2ebb20c51fc999675136ed5f0d585d813</citedby><cites>FETCH-LOGICAL-c293t-47e05034bafba1776628d66466c606eb2ebb20c51fc999675136ed5f0d585d813</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Jung, Won Woong</creatorcontrib><creatorcontrib>Choi, Si Kyung</creatorcontrib><creatorcontrib>Kweon, Soon Yong</creatorcontrib><creatorcontrib>Yeom, Seung Jin</creatorcontrib><title>Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory</title><title>Applied physics letters</title><description>The Pt hillock in a Pt/Ti electrode stack has been the main concern in ferroelectric random access memory due to the reliability problem. The origin of the hillock formation is the compressive stress, and the main mass transport mechanism for hillock formation is the grain boundary diffusion for thin films with a columnar structure. However, the hillock growth orientation and mechanism have not been reported. In this study, we found that an orientation relationship of Pt(100)hillock//Pt(111)thin film existed between the Pt hillock and the thin film. The Pt hillock was a single crystal having facets with polyatomic steps. From these results, we suggest that the Pt hillock growth mechanism is the layer growth of flat faces, which shapes the hillock into a tetrahedron single crystal.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkD1PwzAURS0EEqEw8A880iHte3H8koyo4kuqRIeyEjmOTQ1JjGwj1H9PUTtdXd2jOxzGbhEWCCSWuEBCqKE5YxlCVeUCsT5nGQCInBqJl-wqxs9DlYUQGXvfDCq56We8Q4A537lh8PqLfwT_m3bcTVzxTVpuHTeD0Sn43vCY1IGwPnBrQvDHwWke1NT7kSutTYx8NKMP-2t2YdUQzc0pZ-zt8WG7es7Xr08vq_t1rotGpLysDEgQZadsp7CqiIq6JyqJNAGZrjBdV4CWaHXTNFRJFGR6aaGXtexrFDM2P_7q4GMMxrbfwY0q7FuE9l9Mi-1JjPgD_nBUgg</recordid><startdate>20030915</startdate><enddate>20030915</enddate><creator>Jung, Won Woong</creator><creator>Choi, Si Kyung</creator><creator>Kweon, Soon Yong</creator><creator>Yeom, Seung Jin</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030915</creationdate><title>Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory</title><author>Jung, Won Woong ; Choi, Si Kyung ; Kweon, Soon Yong ; Yeom, Seung Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-47e05034bafba1776628d66466c606eb2ebb20c51fc999675136ed5f0d585d813</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jung, Won Woong</creatorcontrib><creatorcontrib>Choi, Si Kyung</creatorcontrib><creatorcontrib>Kweon, Soon Yong</creatorcontrib><creatorcontrib>Yeom, Seung Jin</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jung, Won Woong</au><au>Choi, Si Kyung</au><au>Kweon, Soon Yong</au><au>Yeom, Seung Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory</atitle><jtitle>Applied physics letters</jtitle><date>2003-09-15</date><risdate>2003</risdate><volume>83</volume><issue>11</issue><spage>2160</spage><epage>2162</epage><pages>2160-2162</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The Pt hillock in a Pt/Ti electrode stack has been the main concern in ferroelectric random access memory due to the reliability problem. The origin of the hillock formation is the compressive stress, and the main mass transport mechanism for hillock formation is the grain boundary diffusion for thin films with a columnar structure. However, the hillock growth orientation and mechanism have not been reported. In this study, we found that an orientation relationship of Pt(100)hillock//Pt(111)thin film existed between the Pt hillock and the thin film. The Pt hillock was a single crystal having facets with polyatomic steps. From these results, we suggest that the Pt hillock growth mechanism is the layer growth of flat faces, which shapes the hillock into a tetrahedron single crystal.</abstract><doi>10.1063/1.1610809</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2003-09, Vol.83 (11), p.2160-2162
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1610809
source AIP Journals Complete; AIP Digital Archive
title Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T14%3A06%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Platinum(100)%20hillock%20growth%20in%20a%20Pt/Ti%20electrode%20stack%20for%20ferroelectric%20random%20access%20memory&rft.jtitle=Applied%20physics%20letters&rft.au=Jung,%20Won%20Woong&rft.date=2003-09-15&rft.volume=83&rft.issue=11&rft.spage=2160&rft.epage=2162&rft.pages=2160-2162&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1610809&rft_dat=%3Ccrossref%3E10_1063_1_1610809%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true