Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

We have investigated a sputter-deposited Al2O3/HfO2 stack as a blocking layer of metal–oxide–nitride–oxide–silicon capacitors. Compared with a SiO2 blocking layer, the sample with Al2O3/HfO2 stack shows lower write/erase (W/E) voltage, higher speed, and longer data retention time. The improvement of...

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Veröffentlicht in:	Journal of applied physics 2003-10, Vol.94 (8), p.5408-5410
Hauptverfasser:	Choi, Sangmoo, Cho, Myungjun, Hwang, Hyunsang, Woo Kim, Jung
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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