Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

We have investigated a sputter-deposited Al2O3/HfO2 stack as a blocking layer of metal–oxide–nitride–oxide–silicon capacitors. Compared with a SiO2 blocking layer, the sample with Al2O3/HfO2 stack shows lower write/erase (W/E) voltage, higher speed, and longer data retention time. The improvement of...

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Veröffentlicht in:Journal of applied physics 2003-10, Vol.94 (8), p.5408-5410
Hauptverfasser: Choi, Sangmoo, Cho, Myungjun, Hwang, Hyunsang, Woo Kim, Jung
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container_issue 8
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container_title Journal of applied physics
container_volume 94
creator Choi, Sangmoo
Cho, Myungjun
Hwang, Hyunsang
Woo Kim, Jung
description We have investigated a sputter-deposited Al2O3/HfO2 stack as a blocking layer of metal–oxide–nitride–oxide–silicon capacitors. Compared with a SiO2 blocking layer, the sample with Al2O3/HfO2 stack shows lower write/erase (W/E) voltage, higher speed, and longer data retention time. The improvement of electrical characteristics can be explained by lower leakage current density and less voltage drop of high-k blocking layer which in turn increase the effective thickness of tunneling oxide. After stressing the W/E voltage of ±10 V voltage for 1 ms, the flat-band voltage shift of 4 V and 10 years of retention time was obtained.
doi_str_mv 10.1063/1.1609650
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title Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer
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