Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

We have examined nanovoid formation, Fe gettering, and Fe clustering phenomena occurring in epitaxial silicon layers implanted with MeV Si ions. Insights into these phenomena as a function of depth have been gained from detailed analyses by Z-contrast imaging in conjunction with electron energy-loss...

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Veröffentlicht in:Applied physics letters 2003-08, Vol.83 (7), p.1367-1369
Hauptverfasser: Kvit, A., Yankov, R. A., Duscher, G., Rozgonyi, G., Glasko, J. M.
Format: Artikel
Sprache:eng
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