Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)

The surface structures formed upon deposition of O2 and Ga2O onto the technologically important arsenic-rich GaAs(001)-c(2×8)/(2×4) surface have been studied using scanning tunneling microscopy and spectroscopy, and the results are compared to density functional theory calculations. O2 chemisorbs by...

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Veröffentlicht in:	The Journal of chemical physics 2003-10, Vol.119 (13), p.6719-6728
Hauptverfasser:	Hale, M. J., Yi, S. I., Sexton, J. Z., Kummel, A. C., Passlack, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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