Composition dependence of polarization fields in GaInN/GaN quantum wells
We report an experimental determination of the internal polarization field in GaInN/GaN quantum wells, due to piezoelectric and spontaneous polarization, utilizing the quantum confined Stark effect, with fields as large as 3.1 MV/cm at 22% In. From its dependence on quantum well composition and stra...
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Veröffentlicht in: | Applied physics letters 2003-08, Vol.83 (6), p.1169-1171 |
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creator | Hangleiter, A. Hitzel, F. Lahmann, S. Rossow, U. |
description | We report an experimental determination of the internal polarization field in GaInN/GaN quantum wells, due to piezoelectric and spontaneous polarization, utilizing the quantum confined Stark effect, with fields as large as 3.1 MV/cm at 22% In. From its dependence on quantum well composition and strain, we find that the total field in GaInN is a linear combination of polarization charges from GaN and InN. The piezoelectric constants d31 for GaN and InN derived from our data are 1.05±0.05 pm/V and 3.7±0.5 pm/V, in fair agreement with theoretical data. |
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From its dependence on quantum well composition and strain, we find that the total field in GaInN is a linear combination of polarization charges from GaN and InN. The piezoelectric constants d31 for GaN and InN derived from our data are 1.05±0.05 pm/V and 3.7±0.5 pm/V, in fair agreement with theoretical data.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1601310</identifier><language>eng</language><ispartof>Applied physics letters, 2003-08, Vol.83 (6), p.1169-1171</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-ba2fca828e9557f6517df1533a3ca190eed535449d49d74d5c7b5ebeff48e9bd3</citedby><cites>FETCH-LOGICAL-c293t-ba2fca828e9557f6517df1533a3ca190eed535449d49d74d5c7b5ebeff48e9bd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Hangleiter, A.</creatorcontrib><creatorcontrib>Hitzel, F.</creatorcontrib><creatorcontrib>Lahmann, S.</creatorcontrib><creatorcontrib>Rossow, U.</creatorcontrib><title>Composition dependence of polarization fields in GaInN/GaN quantum wells</title><title>Applied physics letters</title><description>We report an experimental determination of the internal polarization field in GaInN/GaN quantum wells, due to piezoelectric and spontaneous polarization, utilizing the quantum confined Stark effect, with fields as large as 3.1 MV/cm at 22% In. From its dependence on quantum well composition and strain, we find that the total field in GaInN is a linear combination of polarization charges from GaN and InN. The piezoelectric constants d31 for GaN and InN derived from our data are 1.05±0.05 pm/V and 3.7±0.5 pm/V, in fair agreement with theoretical data.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkEFLxDAUhIMoWFcP_oNcPXQ3r69p2qMU3V1Y1oueS5q8QKRtatNF9NdbdWFgGIaZw8fYPYg1iAI3sIZCAIK4YAkIpVIEKC9ZIoTAtKgkXLObGN-XKDPEhO3q0I8h-tmHgVsaabA0GOLB8TF0evLf-q9ynjobuR_4Vu-H42arj_zjpIf51PNP6rp4y66c7iLdnX3F3p6fXutdenjZ7uvHQ2qyCue01ZkzusxKqqRUrpCgrAOJqNFoqASRlSjzvLKLVG6lUa2klpzLl0lrccUe_n_NFGKcyDXj5Hs9fTUgml8EDTRnBPgD745OdQ</recordid><startdate>20030811</startdate><enddate>20030811</enddate><creator>Hangleiter, A.</creator><creator>Hitzel, F.</creator><creator>Lahmann, S.</creator><creator>Rossow, U.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030811</creationdate><title>Composition dependence of polarization fields in GaInN/GaN quantum wells</title><author>Hangleiter, A. ; Hitzel, F. ; Lahmann, S. ; Rossow, U.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-ba2fca828e9557f6517df1533a3ca190eed535449d49d74d5c7b5ebeff48e9bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hangleiter, A.</creatorcontrib><creatorcontrib>Hitzel, F.</creatorcontrib><creatorcontrib>Lahmann, S.</creatorcontrib><creatorcontrib>Rossow, U.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hangleiter, A.</au><au>Hitzel, F.</au><au>Lahmann, S.</au><au>Rossow, U.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Composition dependence of polarization fields in GaInN/GaN quantum wells</atitle><jtitle>Applied physics letters</jtitle><date>2003-08-11</date><risdate>2003</risdate><volume>83</volume><issue>6</issue><spage>1169</spage><epage>1171</epage><pages>1169-1171</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report an experimental determination of the internal polarization field in GaInN/GaN quantum wells, due to piezoelectric and spontaneous polarization, utilizing the quantum confined Stark effect, with fields as large as 3.1 MV/cm at 22% In. From its dependence on quantum well composition and strain, we find that the total field in GaInN is a linear combination of polarization charges from GaN and InN. The piezoelectric constants d31 for GaN and InN derived from our data are 1.05±0.05 pm/V and 3.7±0.5 pm/V, in fair agreement with theoretical data.</abstract><doi>10.1063/1.1601310</doi><tpages>3</tpages></addata></record> |
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title | Composition dependence of polarization fields in GaInN/GaN quantum wells |
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