Analysis of ultrathin SiO2 interface layers in chemical vapor deposition of Al2O3 on Si by in situ scanning transmission electron microscopy

The development of Al2O3 as an alternative gate dielectric for microelectronic applications depends on the ability to grow a high-quality nanoscale thin film that forms an atomically abrupt interface with Si. Here, the combination of in situ Z-contrast imaging, electron energy loss spectroscopy and...

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Veröffentlicht in:	Applied physics letters 2003-08, Vol.83 (6), p.1187-1189
Hauptverfasser:	Klie, R. F., Browning, N. D., Chowdhuri, A. Roy, Takoudis, C. G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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