Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy
Strain depth profiles in HfO2 (3 nm)/Si(001) prepared by atomic-layer chemical vapor deposition have been measured using high-resolution Rutherford backscattering spectroscopy in combination with a channeling technique. It is found that the Si lattice is compressed in the vertical direction around t...
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| Veröffentlicht in: | Applied physics letters 2003-07, Vol.83 (2), p.296-298 |
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| container_end_page | 298 |
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| container_title | Applied physics letters |
| container_volume | 83 |
| creator | Nakajima, K. Joumori, S. Suzuki, M. Kimura, K. Osipowicz, T. Tok, K. L. Zheng, J. Z. See, A. Zhang, B. C. |
| description | Strain depth profiles in HfO2 (3 nm)/Si(001) prepared by atomic-layer chemical vapor deposition have been measured using high-resolution Rutherford backscattering spectroscopy in combination with a channeling technique. It is found that the Si lattice is compressed in the vertical direction around the interface. The observed maximum strain is about 1% at the interface and the strained region extends down to ∼3 nm from the interface. |
| doi_str_mv | 10.1063/1.1592310 |
| format | Article |
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C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy</atitle><jtitle>Applied physics letters</jtitle><date>2003-07-14</date><risdate>2003</risdate><volume>83</volume><issue>2</issue><spage>296</spage><epage>298</epage><pages>296-298</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Strain depth profiles in HfO2 (3 nm)/Si(001) prepared by atomic-layer chemical vapor deposition have been measured using high-resolution Rutherford backscattering spectroscopy in combination with a channeling technique. It is found that the Si lattice is compressed in the vertical direction around the interface. The observed maximum strain is about 1% at the interface and the strained region extends down to ∼3 nm from the interface.</abstract><doi>10.1063/1.1592310</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2003-07, Vol.83 (2), p.296-298 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy |
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