Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers

Energy-band structures of compressively strained GaInAsP/InP quantum wires fabricated by etching and regrowth method have been calculated using an 8 band k⋅p theory including strain relaxation. The effects of strain-compensating barriers and vertically stacking multiple wire layers on band structure...

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Veröffentlicht in:	Journal of applied physics 2003-08, Vol.94 (3), p.2018-2023
Hauptverfasser:	Haque, Anisul, Yagi, Hideki, Sano, Takuya, Maruyama, Takeo, Arai, Shigehisa
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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