The characteristic carrier–Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering

The characteristic interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices is investigated. Superlattice thin films consisting of 12 periods of a-Si/SiO2:Er/SiO2/SiO2:Er layers were deposited by ion sputtering and subsequent annealing at 950 °C. The d...

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Veröffentlicht in:	Applied physics letters 2003-06, Vol.82 (25), p.4489-4491
Hauptverfasser:	Jhe, Ji-Hong, Shin, Jung H., Kim, Kyung Joong, Moon, Dae Won
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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