Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p -GaN surface

We report on an InGaN-based light-emitting diode (LED) with a top p-GaN surface microroughened using the metal clusters as a wet etching mask. The light-output power for a LED chip with microroughening was increased compared to that for a LED chip without one. This indicates that the scattering of p...

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Veröffentlicht in:	Journal of applied physics 2003-06, Vol.93 (11), p.9383-9385
Hauptverfasser:	Huh, Chul, Lee, Kug-Seung, Kang, Eun-Jeong, Park, Seong-Ju
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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