Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p -GaN surface

Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p -GaN surface

We report on an InGaN-based light-emitting diode (LED) with a top p-GaN surface microroughened using the metal clusters as a wet etching mask. The light-output power for a LED chip with microroughening was increased compared to that for a LED chip without one. This indicates that the scattering of p...

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Veröffentlicht in:Journal of applied physics 2003-06, Vol.93 (11), p.9383-9385
Hauptverfasser: Huh, Chul, Lee, Kug-Seung, Kang, Eun-Jeong, Park, Seong-Ju
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container_end_page 9385
container_issue 11
container_start_page 9383
container_title Journal of applied physics
container_volume 93
creator Huh, Chul
Lee, Kug-Seung
Kang, Eun-Jeong
Park, Seong-Ju
description We report on an InGaN-based light-emitting diode (LED) with a top p-GaN surface microroughened using the metal clusters as a wet etching mask. The light-output power for a LED chip with microroughening was increased compared to that for a LED chip without one. This indicates that the scattering of photons emitted in the active layer was much enhanced at the microroughened top p-GaN surface of a LED due to the angular randomization of photons inside the LED structure, resulting in an increase in the probability of escaping from the LED structure. By employing the top surface microroughened in a LED structure, the power conversion efficiency was increased by 62%.
doi_str_mv 10.1063/1.1571962
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title Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p -GaN surface
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