Low-temperature thermal oxide to plasma-enhanced chemical vapor deposition oxide wafer bonding for thin-film transfer application

Low-temperature direct plasma-enhanced chemical vapor deposition (PECVD) oxide to thermal oxide bonding is described. The PECVD oxide is densified at 350 °C and chemical-mechanically polished to obtain reasonably smooth surface for bonding. The PECVD oxide wafer is bonded to the thermal oxide wafer...

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Veröffentlicht in:	Applied physics letters 2003-04, Vol.82 (16), p.2649-2651
Hauptverfasser:	Tan, C. S., Fan, A., Chen, K. N., Reif, R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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