Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient

We have investigated the different mechanisms of photoluminescence (PL) of silicon nanocrystals due to the quantum confinement effect (QCE) and interface states. Si nanocrystals were formed by pulsed-laser deposition in inert argon and reactive oxygen gas. The collisions between the ejected species...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2003-05, Vol.93 (10), p.6311-6319
Hauptverfasser: Chen, X. Y., Lu, Y. F., Wu, Y. H., Cho, B. J., Liu, M. H., Dai, D. Y., Song, W. D.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!