Rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals

The rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals is investigated by means of capacitance-voltage (C–V) and capacitance decay measurements. The C–V curves show the hysteresis indicating the charge storage effect in Ge nanocrystals....

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Veröffentlicht in:	Applied physics letters 2003-04, Vol.82 (15), p.2527-2529
Hauptverfasser:	Kim, Jae Kwon, Cheong, Hea Jeong, Kim, Yong, Yi, Jae-Yel, Bark, Hong Jun, Bang, S. H., Cho, J. H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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