Dielectric functions (1 to 5 eV) of wurtzite MgxZn1−xO (x⩽0.29) thin films
The optical dielectric functions for polarization perpendicular and parallel to the c-axis (optical axis) of pulsed-laser-deposition grown wurtzite MgxZn1−xO (0⩽x⩽0.29) thin films have been determined at room temperature using ellipsometry for photon energies from 1 to 5 eV. The dielectric functions...
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Veröffentlicht in: | Applied physics letters 2003-04, Vol.82 (14), p.2260-2262 |
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creator | Schmidt, R. Rheinländer, B. Schubert, M. Spemann, D. Butz, T. Lenzner, J. Kaidashev, E. M. Lorenz, M. Rahm, A. Semmelhack, H. C. Grundmann, M. |
description | The optical dielectric functions for polarization perpendicular and parallel to the c-axis (optical axis) of pulsed-laser-deposition grown wurtzite MgxZn1−xO (0⩽x⩽0.29) thin films have been determined at room temperature using ellipsometry for photon energies from 1 to 5 eV. The dielectric functions reveal strong excitonic contributions for all Mg concentrations x. The band gap energies (E0A=3.369 eV for ZnO to 4.101 eV for x=0.29) show a remarkable blueshift. The exciton binding energy (61 meV for ZnO) decreases to approximately 50 meV for x≈0.17 and increases to approximately 58 meV for x=0.29. In contrast to ZnO, the MgxZn1−xO alloys are found uniaxial negative below the band gap energy, opposite to previously reported results. |
doi_str_mv | 10.1063/1.1565185 |
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The exciton binding energy (61 meV for ZnO) decreases to approximately 50 meV for x≈0.17 and increases to approximately 58 meV for x=0.29. In contrast to ZnO, the MgxZn1−xO alloys are found uniaxial negative below the band gap energy, opposite to previously reported results.</abstract><doi>10.1063/1.1565185</doi><tpages>3</tpages></addata></record> |
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title | Dielectric functions (1 to 5 eV) of wurtzite MgxZn1−xO (x⩽0.29) thin films |
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