Dielectric functions (1 to 5 eV) of wurtzite MgxZn1−xO (x⩽0.29) thin films

The optical dielectric functions for polarization perpendicular and parallel to the c-axis (optical axis) of pulsed-laser-deposition grown wurtzite MgxZn1−xO (0⩽x⩽0.29) thin films have been determined at room temperature using ellipsometry for photon energies from 1 to 5 eV. The dielectric functions...

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Veröffentlicht in:Applied physics letters 2003-04, Vol.82 (14), p.2260-2262
Hauptverfasser: Schmidt, R., Rheinländer, B., Schubert, M., Spemann, D., Butz, T., Lenzner, J., Kaidashev, E. M., Lorenz, M., Rahm, A., Semmelhack, H. C., Grundmann, M.
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container_end_page 2262
container_issue 14
container_start_page 2260
container_title Applied physics letters
container_volume 82
creator Schmidt, R.
Rheinländer, B.
Schubert, M.
Spemann, D.
Butz, T.
Lenzner, J.
Kaidashev, E. M.
Lorenz, M.
Rahm, A.
Semmelhack, H. C.
Grundmann, M.
description The optical dielectric functions for polarization perpendicular and parallel to the c-axis (optical axis) of pulsed-laser-deposition grown wurtzite MgxZn1−xO (0⩽x⩽0.29) thin films have been determined at room temperature using ellipsometry for photon energies from 1 to 5 eV. The dielectric functions reveal strong excitonic contributions for all Mg concentrations x. The band gap energies (E0A=3.369 eV for ZnO to 4.101 eV for x=0.29) show a remarkable blueshift. The exciton binding energy (61 meV for ZnO) decreases to approximately 50 meV for x≈0.17 and increases to approximately 58 meV for x=0.29. In contrast to ZnO, the MgxZn1−xO alloys are found uniaxial negative below the band gap energy, opposite to previously reported results.
doi_str_mv 10.1063/1.1565185
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title Dielectric functions (1 to 5 eV) of wurtzite MgxZn1−xO (x⩽0.29) thin films
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