Si 1−y C y / Si (001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics

In situ surface probes and postdeposition analyses were used to follow surface reaction paths and growth kinetics of Si1−yCy alloys grown on Si(001) by gas-source molecular-beam epitaxy from Si2H6/CH3SiH3 mixtures as a function of C concentration y (0–2.6 at %) and temperature Ts (500–600 °C). High-...

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Veröffentlicht in:	Journal of applied physics 2003-04, Vol.93 (7), p.3944-3950
Hauptverfasser:	Foo, Y. L., Bratland, K. A., Cho, B., Desjardins, P., Greene, J. E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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