Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

Self-diffusion coefficients of Si in thermally grown SiO2 on a semiconductor-grade silicon wafer have been determined at temperatures between 1150 and 1300 °C under equilibrium conditions using isotope heterostructures (natSiO2/28SiO2). Si self-diffusion was induced by appropriate heat treatments, a...

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Veröffentlicht in:	Journal of applied physics 2003-03, Vol.93 (6), p.3674-3676
Hauptverfasser:	Takahashi, Tomonori, Fukatsu, Shigeto, Itoh, Kohei M., Uematsu, Masashi, Fujiwara, Akira, Kageshima, Hiroyuki, Takahashi, Yasuo, Shiraishi, Kenji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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