Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1−xMnxAs epitaxial layers

We have investigated the effect of additional doping by Be on the properties of Ga1−xMnxAs (x=0.03). For this relatively low value of x, the Curie temperature is observed to increase with increasing Be concentration. We show that the temperature dependence of the resistivity at zero magnetic field,...

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Veröffentlicht in:	Applied physics letters 2003-02, Vol.82 (8), p.1206-1208
Hauptverfasser:	Yuldashev, Sh. U., Im, Hyunsik, Yalishev, V. Sh, Park, C. S., Kang, T. W., Lee, Sanghoon, Sasaki, Y., Liu, X., Furdyna, J. K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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