Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers

Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers

We report a simple and nondestructive photocurrent method for characterizing the bonding interface between two hydrophobically bonded Si wafers. The relationship of photocurrent versus wavelength was measured and analyzed. The direction of the photocurrent indicates the band-bending direction, and t...

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Veröffentlicht in:Applied physics letters 2003-02, Vol.82 (6), p.916-918
Hauptverfasser: Yu, L. S., Mages, P., Qiao, D., Jia, L., Yu, P. K. L., Lau, S. S., Suni, T., Henttinen, K., Suni, I.
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container_end_page 918
container_issue 6
container_start_page 916
container_title Applied physics letters
container_volume 82
creator Yu, L. S.
Mages, P.
Qiao, D.
Jia, L.
Yu, P. K. L.
Lau, S. S.
Suni, T.
Henttinen, K.
Suni, I.
description We report a simple and nondestructive photocurrent method for characterizing the bonding interface between two hydrophobically bonded Si wafers. The relationship of photocurrent versus wavelength was measured and analyzed. The direction of the photocurrent indicates the band-bending direction, and thus, the donor or acceptor nature of the interface states. The photocurrent is proportional to the electric field at the interface induced by band bending. Our results showed that the Si pairs bonded in air have much larger band bending at the interface than those bonded in dry nitrogen, and that both have donor-like interface states.
doi_str_mv 10.1063/1.1544063
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title Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers
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