Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs

The precipitation of arsenic in annealed Be delta-doped GaAs grown by low-temperature molecular-beam epitaxy has been studied using transmission electron microscopy. It was found that the planes doped with [Be]=1.0×1014 cm−2 always accumulate As precipitates, while the planes doped with [Be]=1×1013 ...

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Veröffentlicht in:Applied physics letters 2003-01, Vol.82 (2), p.305-307
Hauptverfasser: Huang, J. H., Hsieh, L. Z., Guo, X. J., Su, Y. O.
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container_title Applied physics letters
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Hsieh, L. Z.
Guo, X. J.
Su, Y. O.
description The precipitation of arsenic in annealed Be delta-doped GaAs grown by low-temperature molecular-beam epitaxy has been studied using transmission electron microscopy. It was found that the planes doped with [Be]=1.0×1014 cm−2 always accumulate As precipitates, while the planes doped with [Be]=1×1013 cm−2 tend to deplete As precipitates. In contrast, the planes doped with [Be]=3 and 2×1013 cm−2 exhibit a weak accumulation property when annealed at 700 °C, but a depletion property when annealed 800 °C. The existence of twins and/or precipitates around the [Be]=1.0×1014 cm−2 doped planes found in the as-grown sample suggests a strain-induced mechanism to account for the As precipitates accumulation on these planes.
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title Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs
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