Formation of light-emitting FeSi2 in Fe thin films on ion-implanted (111)Si

Formation of light-emitting FeSi2 in Fe thin films on ion-implanted (111)Si

The formation of iron silicides on (111)Si and effects of ion implantation on phase transformation have been investigated by sheet resistance measurements, grazing-incidence x-ray diffractometry, transmission electron microscopy, energy-dispersive x-ray analysis, and secondary ion mass spectroscopy....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2003-02, Vol.93 (3), p.1468-1471
Hauptverfasser: Lu, H. T., Chen, L. J., Chueh, Y. L., Chou, L. J.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1471
container_issue 3
container_start_page 1468
container_title Journal of applied physics
container_volume 93
creator Lu, H. T.
Chen, L. J.
Chueh, Y. L.
Chou, L. J.
description The formation of iron silicides on (111)Si and effects of ion implantation on phase transformation have been investigated by sheet resistance measurements, grazing-incidence x-ray diffractometry, transmission electron microscopy, energy-dispersive x-ray analysis, and secondary ion mass spectroscopy. Ion implantation was found to enhance the growth of light-emitting β-FeSi2. Phase transformation from FeSi to β-FeSi2 begins at 600 °C and completes at 700 °C. P+ implantation was found to lower the transformation temperature from 700 to 600 °C. Wider than 20 nm As-decorated grain boundaries were observed in the As+-implanted samples annealed at 600–700 °C. The As-rich grain boundaries disappeared after 800 °C annealing, leading to a decrease in resistivity.
doi_str_mv 10.1063/1.1534379
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1534379</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1534379</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-88be2f4ac52bdec417ec040696a48d27f59a8e32c0b378ac731159bf18b6afb53</originalsourceid><addsrcrecordid>eNotkL1OwzAURi0EEqEw8AYe6eByrx3H9ogqAohKDIU5sh27NcpPlXjh7Qmi0_mGo284hNwjbBAq8YgblKIUylyQAkEbpqSES1IAcGTaKHNNbub5GwBRC1OQ93qcepvTONAx0i4djpmFPuWchgOtwz5xmoZl0HxcGFPXz3RxF5-l_tTZIYeWPiDiep9uyVW03RzuzlyRr_r5c_vKdh8vb9unHfPciMy0doHH0nrJXRt8iSp4KKEylS11y1WUxuoguAcnlLZeCURpXETtKhudFCuy_v_10zjPU4jNaUq9nX4ahOavQoPNuYL4BcZgTWI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Formation of light-emitting FeSi2 in Fe thin films on ion-implanted (111)Si</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Lu, H. T. ; Chen, L. J. ; Chueh, Y. L. ; Chou, L. J.</creator><creatorcontrib>Lu, H. T. ; Chen, L. J. ; Chueh, Y. L. ; Chou, L. J.</creatorcontrib><description>The formation of iron silicides on (111)Si and effects of ion implantation on phase transformation have been investigated by sheet resistance measurements, grazing-incidence x-ray diffractometry, transmission electron microscopy, energy-dispersive x-ray analysis, and secondary ion mass spectroscopy. Ion implantation was found to enhance the growth of light-emitting β-FeSi2. Phase transformation from FeSi to β-FeSi2 begins at 600 °C and completes at 700 °C. P+ implantation was found to lower the transformation temperature from 700 to 600 °C. Wider than 20 nm As-decorated grain boundaries were observed in the As+-implanted samples annealed at 600–700 °C. The As-rich grain boundaries disappeared after 800 °C annealing, leading to a decrease in resistivity.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1534379</identifier><language>eng</language><ispartof>Journal of applied physics, 2003-02, Vol.93 (3), p.1468-1471</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-88be2f4ac52bdec417ec040696a48d27f59a8e32c0b378ac731159bf18b6afb53</citedby><cites>FETCH-LOGICAL-c293t-88be2f4ac52bdec417ec040696a48d27f59a8e32c0b378ac731159bf18b6afb53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Lu, H. T.</creatorcontrib><creatorcontrib>Chen, L. J.</creatorcontrib><creatorcontrib>Chueh, Y. L.</creatorcontrib><creatorcontrib>Chou, L. J.</creatorcontrib><title>Formation of light-emitting FeSi2 in Fe thin films on ion-implanted (111)Si</title><title>Journal of applied physics</title><description>The formation of iron silicides on (111)Si and effects of ion implantation on phase transformation have been investigated by sheet resistance measurements, grazing-incidence x-ray diffractometry, transmission electron microscopy, energy-dispersive x-ray analysis, and secondary ion mass spectroscopy. Ion implantation was found to enhance the growth of light-emitting β-FeSi2. Phase transformation from FeSi to β-FeSi2 begins at 600 °C and completes at 700 °C. P+ implantation was found to lower the transformation temperature from 700 to 600 °C. Wider than 20 nm As-decorated grain boundaries were observed in the As+-implanted samples annealed at 600–700 °C. The As-rich grain boundaries disappeared after 800 °C annealing, leading to a decrease in resistivity.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAURi0EEqEw8AYe6eByrx3H9ogqAohKDIU5sh27NcpPlXjh7Qmi0_mGo284hNwjbBAq8YgblKIUylyQAkEbpqSES1IAcGTaKHNNbub5GwBRC1OQ93qcepvTONAx0i4djpmFPuWchgOtwz5xmoZl0HxcGFPXz3RxF5-l_tTZIYeWPiDiep9uyVW03RzuzlyRr_r5c_vKdh8vb9unHfPciMy0doHH0nrJXRt8iSp4KKEylS11y1WUxuoguAcnlLZeCURpXETtKhudFCuy_v_10zjPU4jNaUq9nX4ahOavQoPNuYL4BcZgTWI</recordid><startdate>20030201</startdate><enddate>20030201</enddate><creator>Lu, H. T.</creator><creator>Chen, L. J.</creator><creator>Chueh, Y. L.</creator><creator>Chou, L. J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030201</creationdate><title>Formation of light-emitting FeSi2 in Fe thin films on ion-implanted (111)Si</title><author>Lu, H. T. ; Chen, L. J. ; Chueh, Y. L. ; Chou, L. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-88be2f4ac52bdec417ec040696a48d27f59a8e32c0b378ac731159bf18b6afb53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, H. T.</creatorcontrib><creatorcontrib>Chen, L. J.</creatorcontrib><creatorcontrib>Chueh, Y. L.</creatorcontrib><creatorcontrib>Chou, L. J.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, H. T.</au><au>Chen, L. J.</au><au>Chueh, Y. L.</au><au>Chou, L. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation of light-emitting FeSi2 in Fe thin films on ion-implanted (111)Si</atitle><jtitle>Journal of applied physics</jtitle><date>2003-02-01</date><risdate>2003</risdate><volume>93</volume><issue>3</issue><spage>1468</spage><epage>1471</epage><pages>1468-1471</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The formation of iron silicides on (111)Si and effects of ion implantation on phase transformation have been investigated by sheet resistance measurements, grazing-incidence x-ray diffractometry, transmission electron microscopy, energy-dispersive x-ray analysis, and secondary ion mass spectroscopy. Ion implantation was found to enhance the growth of light-emitting β-FeSi2. Phase transformation from FeSi to β-FeSi2 begins at 600 °C and completes at 700 °C. P+ implantation was found to lower the transformation temperature from 700 to 600 °C. Wider than 20 nm As-decorated grain boundaries were observed in the As+-implanted samples annealed at 600–700 °C. The As-rich grain boundaries disappeared after 800 °C annealing, leading to a decrease in resistivity.</abstract><doi>10.1063/1.1534379</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2003-02, Vol.93 (3), p.1468-1471
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_1534379
source AIP Journals Complete; AIP Digital Archive
title Formation of light-emitting FeSi2 in Fe thin films on ion-implanted (111)Si
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T11%3A27%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Formation%20of%20light-emitting%20FeSi2%20in%20Fe%20thin%20films%20on%20ion-implanted%20(111)Si&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Lu,%20H.%20T.&rft.date=2003-02-01&rft.volume=93&rft.issue=3&rft.spage=1468&rft.epage=1471&rft.pages=1468-1471&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1534379&rft_dat=%3Ccrossref%3E10_1063_1_1534379%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true