High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing

We show that by annealing Ga1−xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature TC and conductivity can be obtained. TC is unambiguously determined to be 118 K for Mn concentration x=0...

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Veröffentlicht in:	Applied physics letters 2002-12, Vol.81 (26), p.4991-4993
Hauptverfasser:	Edmonds, K. W., Wang, K. Y., Campion, R. P., Neumann, A. C., Farley, N. R. S., Gallagher, B. L., Foxon, C. T.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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