Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n -channel metal–oxide–semiconductor field-effect transistors

An analytical scheme to combine the channel component and the edge component of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors has been developed. The results obtained have been calibrated against the published experimental and...

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Veröffentlicht in:	Journal of applied physics 2003-01, Vol.93 (2), p.1064-1068
Hauptverfasser:	Maitra, Kingsuk, Bhat, Navakanta
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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