Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

GaAs/Al x Ga (1−x) As quantum well lasers have been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GexSi(1−x) virtual substrates on Si. A number of GaAs/Ge/Si integration issues including Ge autodoping behavior in GaAs, reduced critical thickness due to thermal expans...

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Veröffentlicht in:	Journal of applied physics 2003-01, Vol.93 (1), p.362-367
Hauptverfasser:	Groenert, Michael E., Leitz, Christopher W., Pitera, Arthur J., Yang, Vicky, Lee, Harry, Ram, Rajeev J., Fitzgerald, Eugene A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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