Bismuth telluride compounds with high thermoelectric figures of merit

The thermoelectric properties of the p-type (Bi0.25Sb0.75)2Te3 doped with 8 wt. % excess Te and the n-type Bi2(Te0.94Se0.06)3 doped substantially with 0.07 wt. % I, 0.02 wt. % Te, and 0.03 wt. % CuBr which were grown by the Bridgman method at a rate of 6 cm/h were measured before and after annealing...

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Veröffentlicht in:	Journal of applied physics 2003-01, Vol.93 (1), p.368-374
Hauptverfasser:	Yamashita, Osamu, Tomiyoshi, Shoichi, Makita, Ken
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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