Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As
We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn2+ acceptors with a local moment S=5/2 and from nonmagnetic compensating defects. In metallic samples Boltzmann transport t...
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| Veröffentlicht in: | Applied physics letters 2002-11, Vol.81 (21), p.4029-4031 |
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| container_issue | 21 |
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| container_title | Applied physics letters |
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| creator | Jungwirth, T. Abolfath, M. Sinova, Jairo Kučera, J. MacDonald, A. H. |
| description | We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn2+ acceptors with a local moment S=5/2 and from nonmagnetic compensating defects. In metallic samples Boltzmann transport theory with golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition. |
| doi_str_mv | 10.1063/1.1523160 |
| format | Article |
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In metallic samples Boltzmann transport theory with golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition.</abstract><doi>10.1063/1.1523160</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2002-11, Vol.81 (21), p.4029-4031 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1523160 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As |
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