Drift, diffusion, and trapping of hydrogen in p -type GaN

Using capacitance–voltage measurements we have measured both the diffusion and the field-induced drift of H in GaN p/n+ diodes grown by metalorganic vapor phase epitaxy. Our data are well described by a computational model which simulates all of the important electronic processes as well as the drif...

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Veröffentlicht in:	Journal of applied physics 2002-12, Vol.92 (12), p.7246-7252
Hauptverfasser:	Seager, C. H., Myers, S. M., Wright, A. F., Koleske, D. D., Allerman, A. A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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