Stress-induced growth of bismuth nanowires
We report a method of making nanowires of bismuth (Bi) with diameters ranging from 30 to 200 nm and lengths up to several millimeters. The nanowires are extruded spontaneously at the rate of a few micrometers per second at room temperature from the surfaces of freshly grown composite thin films cons...
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| Veröffentlicht in: | Applied physics letters 2002-10, Vol.81 (17), p.3248-3250 |
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| container_end_page | 3250 |
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| container_issue | 17 |
| container_start_page | 3248 |
| container_title | Applied physics letters |
| container_volume | 81 |
| creator | Cheng, Yang-Tse Weiner, Anita M. Wong, Curtis A. Balogh, Michael P. Lukitsch, Michael J. |
| description | We report a method of making nanowires of bismuth (Bi) with diameters ranging from 30 to 200 nm and lengths up to several millimeters. The nanowires are extruded spontaneously at the rate of a few micrometers per second at room temperature from the surfaces of freshly grown composite thin films consisting of Bi and chrome–nitride. The high compressive stress in these composite thin films is the driving force responsible for the nanowire formation. This mechanism can also be used to create nanowires of other materials. |
| doi_str_mv | 10.1063/1.1515885 |
| format | Article |
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| ispartof | Applied physics letters, 2002-10, Vol.81 (17), p.3248-3250 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Stress-induced growth of bismuth nanowires |
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