Optical properties of self-assembled Ge wires grown on Si(113)

We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation o...

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Veröffentlicht in:	Applied physics letters 2002-09, Vol.81 (13), p.2448-2450
Hauptverfasser:	Halsall, M. P., Omi, H., Ogino, T.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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