Optical properties of self-assembled Ge wires grown on Si(113)

We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2002-09, Vol.81 (13), p.2448-2450
Hauptverfasser: Halsall, M. P., Omi, H., Ogino, T.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 2450
container_issue 13
container_start_page 2448
container_title Applied physics letters
container_volume 81
creator Halsall, M. P.
Omi, H.
Ogino, T.
description We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation of coherent wire-shaped islands elongated in the [33-2] direction, some with lengths exceeding 500 nm. Micro-Raman measurements indicate that at this low growth temperature intermixing of the silicon and germanium is restricted with an average Ge fraction exceeding 0.7. Capping of the wires with a 20 nm Si epilayer enables the observation of low-temperature photoluminescence. A series of samples with increasing Ge coverage were studied and the onset of Ge islanding is observed to occur at a coverage of 5 monolayers. Wire formation occurs at coverages of 6 monolayers or greater. The observed emission band from the wires has a line shape quite different from that observed from Ge islands on Si[100], being substantially narrower in energy. A stochastic calculation based on idealized quantum wires is presented which reproduces the observed photoluminescence line shape well.
doi_str_mv 10.1063/1.1509120
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1509120</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1509120</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-508aedd46e42649ec62f40452f3309050268f1c7f8e183a7c47852e377a58ba3</originalsourceid><addsrcrecordid>eNotj81Kw0AURgdRMFYXvsEs7WLqvfOfjSDFVqHQhd2H6eSORNImzASKb2_Frg4fBz44jD0iLBCsesYFGqhRwhWrEJwTCtFfswoAlLC1wVt2V8r3eRqpVMVetuPUxdDzMQ8j5amjwofEC_VJhFLosO-p5Wvipy6f1VceTkc-HPln94So5vfsJoW-0MOFM7Zbve2W72KzXX8sXzciytpMwoAP1LbakpZW1xStTBq0kUkpqMGAtD5hdMkTehVc1M4bScq5YPw-qBmb_9_GPJSSKTVj7g4h_zQIzV93g82lW_0C7DlHnA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Optical properties of self-assembled Ge wires grown on Si(113)</title><source>Scitation (American Institute of Physics)</source><source>AIP Digital Archive</source><creator>Halsall, M. P. ; Omi, H. ; Ogino, T.</creator><creatorcontrib>Halsall, M. P. ; Omi, H. ; Ogino, T.</creatorcontrib><description>We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation of coherent wire-shaped islands elongated in the [33-2] direction, some with lengths exceeding 500 nm. Micro-Raman measurements indicate that at this low growth temperature intermixing of the silicon and germanium is restricted with an average Ge fraction exceeding 0.7. Capping of the wires with a 20 nm Si epilayer enables the observation of low-temperature photoluminescence. A series of samples with increasing Ge coverage were studied and the onset of Ge islanding is observed to occur at a coverage of 5 monolayers. Wire formation occurs at coverages of 6 monolayers or greater. The observed emission band from the wires has a line shape quite different from that observed from Ge islands on Si[100], being substantially narrower in energy. A stochastic calculation based on idealized quantum wires is presented which reproduces the observed photoluminescence line shape well.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1509120</identifier><language>eng</language><ispartof>Applied physics letters, 2002-09, Vol.81 (13), p.2448-2450</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-508aedd46e42649ec62f40452f3309050268f1c7f8e183a7c47852e377a58ba3</citedby><cites>FETCH-LOGICAL-c295t-508aedd46e42649ec62f40452f3309050268f1c7f8e183a7c47852e377a58ba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Halsall, M. P.</creatorcontrib><creatorcontrib>Omi, H.</creatorcontrib><creatorcontrib>Ogino, T.</creatorcontrib><title>Optical properties of self-assembled Ge wires grown on Si(113)</title><title>Applied physics letters</title><description>We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation of coherent wire-shaped islands elongated in the [33-2] direction, some with lengths exceeding 500 nm. Micro-Raman measurements indicate that at this low growth temperature intermixing of the silicon and germanium is restricted with an average Ge fraction exceeding 0.7. Capping of the wires with a 20 nm Si epilayer enables the observation of low-temperature photoluminescence. A series of samples with increasing Ge coverage were studied and the onset of Ge islanding is observed to occur at a coverage of 5 monolayers. Wire formation occurs at coverages of 6 monolayers or greater. The observed emission band from the wires has a line shape quite different from that observed from Ge islands on Si[100], being substantially narrower in energy. A stochastic calculation based on idealized quantum wires is presented which reproduces the observed photoluminescence line shape well.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotj81Kw0AURgdRMFYXvsEs7WLqvfOfjSDFVqHQhd2H6eSORNImzASKb2_Frg4fBz44jD0iLBCsesYFGqhRwhWrEJwTCtFfswoAlLC1wVt2V8r3eRqpVMVetuPUxdDzMQ8j5amjwofEC_VJhFLosO-p5Wvipy6f1VceTkc-HPln94So5vfsJoW-0MOFM7Zbve2W72KzXX8sXzciytpMwoAP1LbakpZW1xStTBq0kUkpqMGAtD5hdMkTehVc1M4bScq5YPw-qBmb_9_GPJSSKTVj7g4h_zQIzV93g82lW_0C7DlHnA</recordid><startdate>20020923</startdate><enddate>20020923</enddate><creator>Halsall, M. P.</creator><creator>Omi, H.</creator><creator>Ogino, T.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20020923</creationdate><title>Optical properties of self-assembled Ge wires grown on Si(113)</title><author>Halsall, M. P. ; Omi, H. ; Ogino, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-508aedd46e42649ec62f40452f3309050268f1c7f8e183a7c47852e377a58ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Halsall, M. P.</creatorcontrib><creatorcontrib>Omi, H.</creatorcontrib><creatorcontrib>Ogino, T.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Halsall, M. P.</au><au>Omi, H.</au><au>Ogino, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties of self-assembled Ge wires grown on Si(113)</atitle><jtitle>Applied physics letters</jtitle><date>2002-09-23</date><risdate>2002</risdate><volume>81</volume><issue>13</issue><spage>2448</spage><epage>2450</epage><pages>2448-2450</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation of coherent wire-shaped islands elongated in the [33-2] direction, some with lengths exceeding 500 nm. Micro-Raman measurements indicate that at this low growth temperature intermixing of the silicon and germanium is restricted with an average Ge fraction exceeding 0.7. Capping of the wires with a 20 nm Si epilayer enables the observation of low-temperature photoluminescence. A series of samples with increasing Ge coverage were studied and the onset of Ge islanding is observed to occur at a coverage of 5 monolayers. Wire formation occurs at coverages of 6 monolayers or greater. The observed emission band from the wires has a line shape quite different from that observed from Ge islands on Si[100], being substantially narrower in energy. A stochastic calculation based on idealized quantum wires is presented which reproduces the observed photoluminescence line shape well.</abstract><doi>10.1063/1.1509120</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2002-09, Vol.81 (13), p.2448-2450
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1509120
source Scitation (American Institute of Physics); AIP Digital Archive
title Optical properties of self-assembled Ge wires grown on Si(113)
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T21%3A03%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optical%20properties%20of%20self-assembled%20Ge%20wires%20grown%20on%20Si(113)&rft.jtitle=Applied%20physics%20letters&rft.au=Halsall,%20M.%20P.&rft.date=2002-09-23&rft.volume=81&rft.issue=13&rft.spage=2448&rft.epage=2450&rft.pages=2448-2450&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1509120&rft_dat=%3Ccrossref%3E10_1063_1_1509120%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true