Optical properties of self-assembled Ge wires grown on Si(113)
We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation o...
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Veröffentlicht in: | Applied physics letters 2002-09, Vol.81 (13), p.2448-2450 |
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description | We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation of coherent wire-shaped islands elongated in the [33-2] direction, some with lengths exceeding 500 nm. Micro-Raman measurements indicate that at this low growth temperature intermixing of the silicon and germanium is restricted with an average Ge fraction exceeding 0.7. Capping of the wires with a 20 nm Si epilayer enables the observation of low-temperature photoluminescence. A series of samples with increasing Ge coverage were studied and the onset of Ge islanding is observed to occur at a coverage of 5 monolayers. Wire formation occurs at coverages of 6 monolayers or greater. The observed emission band from the wires has a line shape quite different from that observed from Ge islands on Si[100], being substantially narrower in energy. A stochastic calculation based on idealized quantum wires is presented which reproduces the observed photoluminescence line shape well. |
doi_str_mv | 10.1063/1.1509120 |
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P. ; Omi, H. ; Ogino, T.</creator><creatorcontrib>Halsall, M. P. ; Omi, H. ; Ogino, T.</creatorcontrib><description>We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation of coherent wire-shaped islands elongated in the [33-2] direction, some with lengths exceeding 500 nm. Micro-Raman measurements indicate that at this low growth temperature intermixing of the silicon and germanium is restricted with an average Ge fraction exceeding 0.7. Capping of the wires with a 20 nm Si epilayer enables the observation of low-temperature photoluminescence. A series of samples with increasing Ge coverage were studied and the onset of Ge islanding is observed to occur at a coverage of 5 monolayers. Wire formation occurs at coverages of 6 monolayers or greater. The observed emission band from the wires has a line shape quite different from that observed from Ge islands on Si[100], being substantially narrower in energy. 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P.</creatorcontrib><creatorcontrib>Omi, H.</creatorcontrib><creatorcontrib>Ogino, T.</creatorcontrib><title>Optical properties of self-assembled Ge wires grown on Si(113)</title><title>Applied physics letters</title><description>We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation of coherent wire-shaped islands elongated in the [33-2] direction, some with lengths exceeding 500 nm. Micro-Raman measurements indicate that at this low growth temperature intermixing of the silicon and germanium is restricted with an average Ge fraction exceeding 0.7. Capping of the wires with a 20 nm Si epilayer enables the observation of low-temperature photoluminescence. A series of samples with increasing Ge coverage were studied and the onset of Ge islanding is observed to occur at a coverage of 5 monolayers. Wire formation occurs at coverages of 6 monolayers or greater. The observed emission band from the wires has a line shape quite different from that observed from Ge islands on Si[100], being substantially narrower in energy. A stochastic calculation based on idealized quantum wires is presented which reproduces the observed photoluminescence line shape well.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotj81Kw0AURgdRMFYXvsEs7WLqvfOfjSDFVqHQhd2H6eSORNImzASKb2_Frg4fBz44jD0iLBCsesYFGqhRwhWrEJwTCtFfswoAlLC1wVt2V8r3eRqpVMVetuPUxdDzMQ8j5amjwofEC_VJhFLosO-p5Wvipy6f1VceTkc-HPln94So5vfsJoW-0MOFM7Zbve2W72KzXX8sXzciytpMwoAP1LbakpZW1xStTBq0kUkpqMGAtD5hdMkTehVc1M4bScq5YPw-qBmb_9_GPJSSKTVj7g4h_zQIzV93g82lW_0C7DlHnA</recordid><startdate>20020923</startdate><enddate>20020923</enddate><creator>Halsall, M. P.</creator><creator>Omi, H.</creator><creator>Ogino, T.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20020923</creationdate><title>Optical properties of self-assembled Ge wires grown on Si(113)</title><author>Halsall, M. P. ; Omi, H. ; Ogino, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-508aedd46e42649ec62f40452f3309050268f1c7f8e183a7c47852e377a58ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Halsall, M. P.</creatorcontrib><creatorcontrib>Omi, H.</creatorcontrib><creatorcontrib>Ogino, T.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Halsall, M. P.</au><au>Omi, H.</au><au>Ogino, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties of self-assembled Ge wires grown on Si(113)</atitle><jtitle>Applied physics letters</jtitle><date>2002-09-23</date><risdate>2002</risdate><volume>81</volume><issue>13</issue><spage>2448</spage><epage>2450</epage><pages>2448-2450</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report photoluminescence and Raman scattering measurements of Ge wires formed by self-assembly on Si(113) substrates. The samples were grown at a growth temperature of 500 °C on Si(113) substrates by solid-source molecular-beam epitaxy. Atomic force microscopy results clearly show the formation of coherent wire-shaped islands elongated in the [33-2] direction, some with lengths exceeding 500 nm. Micro-Raman measurements indicate that at this low growth temperature intermixing of the silicon and germanium is restricted with an average Ge fraction exceeding 0.7. Capping of the wires with a 20 nm Si epilayer enables the observation of low-temperature photoluminescence. A series of samples with increasing Ge coverage were studied and the onset of Ge islanding is observed to occur at a coverage of 5 monolayers. Wire formation occurs at coverages of 6 monolayers or greater. The observed emission band from the wires has a line shape quite different from that observed from Ge islands on Si[100], being substantially narrower in energy. A stochastic calculation based on idealized quantum wires is presented which reproduces the observed photoluminescence line shape well.</abstract><doi>10.1063/1.1509120</doi><tpages>3</tpages></addata></record> |
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title | Optical properties of self-assembled Ge wires grown on Si(113) |
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