Thermally stable, oxidation resistant capping technology for Ti/Al ohmic contacts to n -GaN
The intermetallic TiAl3 has been used as a thermally stable cap for Ti/Al ohmic contacts to n-GaN. The electrical performance of the TiAl3-capped contact is nearly the same as that of a standard Ti/Al/Ni/Au contact processed on the same substrate, but the Ti/Al/TiAl3 contact’s performance is optimiz...
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Veröffentlicht in: | Journal of applied physics 2002-10, Vol.92 (8), p.4283-4289 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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