Thermally stable, oxidation resistant capping technology for Ti/Al ohmic contacts to n -GaN

The intermetallic TiAl3 has been used as a thermally stable cap for Ti/Al ohmic contacts to n-GaN. The electrical performance of the TiAl3-capped contact is nearly the same as that of a standard Ti/Al/Ni/Au contact processed on the same substrate, but the Ti/Al/TiAl3 contact’s performance is optimiz...

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Veröffentlicht in:Journal of applied physics 2002-10, Vol.92 (8), p.4283-4289
Hauptverfasser: Pelto, Christopher M., Chang, Y. Austin, Chen, Yong, Williams, R. Stanley
Format: Artikel
Sprache:eng
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