Dielectric properties of oriented PbZrO3 thin films grown by sol-gel process

Antiferroelectric PbZrO3 (PZ) films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4{110} superlattice spots in a [001] sele...

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Veröffentlicht in:	Journal of applied physics 2002-10, Vol.92 (7), p.3990-3994
Hauptverfasser:	Zhai, Jiwei, Yao, Y., Li, X., Hung, T. F., Xu, Z. K., Chen, Haydn, Colla, Eugene V., Wu, T. B.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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