Dielectric properties of oriented PbZrO3 thin films grown by sol-gel process
Antiferroelectric PbZrO3 (PZ) films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4{110} superlattice spots in a [001] sele...
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| Veröffentlicht in: | Journal of applied physics 2002-10, Vol.92 (7), p.3990-3994 |
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| container_end_page | 3994 |
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| container_title | Journal of applied physics |
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| creator | Zhai, Jiwei Yao, Y. Li, X. Hung, T. F. Xu, Z. K. Chen, Haydn Colla, Eugene V. Wu, T. B. |
| description | Antiferroelectric PbZrO3 (PZ) films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4{110} superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO3 on Pt/Ti/SiO2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops. |
| doi_str_mv | 10.1063/1.1505981 |
| format | Article |
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F. ; Xu, Z. K. ; Chen, Haydn ; Colla, Eugene V. ; Wu, T. B.</creator><creatorcontrib>Zhai, Jiwei ; Yao, Y. ; Li, X. ; Hung, T. F. ; Xu, Z. K. ; Chen, Haydn ; Colla, Eugene V. ; Wu, T. B.</creatorcontrib><description>Antiferroelectric PbZrO3 (PZ) films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4{110} superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO3 on Pt/Ti/SiO2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1505981</identifier><language>eng</language><ispartof>Journal of applied physics, 2002-10, Vol.92 (7), p.3990-3994</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-bf2ea4bb411a5b441cf394f9551489025290ddab30f1b3a4f05232bef159c7233</citedby><cites>FETCH-LOGICAL-c225t-bf2ea4bb411a5b441cf394f9551489025290ddab30f1b3a4f05232bef159c7233</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Zhai, Jiwei</creatorcontrib><creatorcontrib>Yao, Y.</creatorcontrib><creatorcontrib>Li, X.</creatorcontrib><creatorcontrib>Hung, T. 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The presence of a conductive buffer layer of LaNiO3 on Pt/Ti/SiO2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotkD1PwzAUAC0EEqEw8A-8MqS85w8aj6hAQYpUBlhYItt5LkZpHNmRUP89quh0091wjN0iLBEe5D0uUYM2DZ6xCqEx9UprOGcVgMC6MStzya5K-QFAbKSpWPsUaSA_5-j5lNNEeY5UeAo85UjjTD1_d195K_n8HUce4rAvfJfT78jdgZc01DsajqanUq7ZRbBDoZsTF-zz5flj_Vq3283b-rGtvRB6rl0QZJVzCtFqpxT6II0KRmtUjQGhhYG-t05CQCetCqCFFI4CauNXQsoFu_vv-pxKyRS6Kce9zYcOoTtu6LA7bZB_LQNO4g</recordid><startdate>20021001</startdate><enddate>20021001</enddate><creator>Zhai, Jiwei</creator><creator>Yao, Y.</creator><creator>Li, X.</creator><creator>Hung, T. F.</creator><creator>Xu, Z. 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K.</creatorcontrib><creatorcontrib>Chen, Haydn</creatorcontrib><creatorcontrib>Colla, Eugene V.</creatorcontrib><creatorcontrib>Wu, T. B.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhai, Jiwei</au><au>Yao, Y.</au><au>Li, X.</au><au>Hung, T. F.</au><au>Xu, Z. K.</au><au>Chen, Haydn</au><au>Colla, Eugene V.</au><au>Wu, T. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dielectric properties of oriented PbZrO3 thin films grown by sol-gel process</atitle><jtitle>Journal of applied physics</jtitle><date>2002-10-01</date><risdate>2002</risdate><volume>92</volume><issue>7</issue><spage>3990</spage><epage>3994</epage><pages>3990-3994</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Antiferroelectric PbZrO3 (PZ) films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4{110} superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO3 on Pt/Ti/SiO2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.</abstract><doi>10.1063/1.1505981</doi><tpages>5</tpages></addata></record> |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Dielectric properties of oriented PbZrO3 thin films grown by sol-gel process |
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