High-responsivity submicron metal-semiconductor-metal ultraviolet detectors
Metal-semiconductor-metal ultraviolet (UV) detectors with finger width and pitch ranging from 0.5 to 4 μm have been fabricated on GaN. A superlinear enhancement of responsivity is observed when scaling down, in agreement with a model that includes optical absorption and the variation of the space-ch...
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| Veröffentlicht in: | Applied physics letters 2002-09, Vol.81 (10), p.1902-1904 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Metal-semiconductor-metal ultraviolet (UV) detectors with finger width and pitch ranging from 0.5 to 4 μm have been fabricated on GaN. A superlinear enhancement of responsivity is observed when scaling down, in agreement with a model that includes optical absorption and the variation of the space-charge regions with bias. No degradation is found in terms of UV/visible contrast or photocurrent linearity. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.1504492 |